Abstract: In IGBT datasheets, PC, PD, and PTOT are three crucial parameters that collectively define the thermal performance limits of power modules. SHYSEMI will explain the meanings, differences, and connections between PC, PD, and PTOT in a simple and accessible manner.
1.Core Conclusion: The Relationship between PC, PD, and PTOT
First, we need to clarify the basic relationship between the three:
PC and PD: In most datasheets, PC and PD have identical meanings, referring to "maximum continuous collector power dissipation." This article will use the term PD for the remainder of this article.
PD and PTOT: The definitions of PD and PTOT differ slightly, but their core meanings are the same. PTOT more explicitly emphasizes "total power dissipation," typically including the combined power dissipation of the IGBT itself and its internal body diode.
1. Definition
PD stands for: Under specified heat conditions, maximum allowable value of constant collector power dissipation.
Key Point: "Specified heat conditions" is a test standard designed to ensure that all manufacturers calibrate parameters under the same benchmark. It defines the test environment but does not affect the nature of PD as an inherent thermal performance parameter of the devic.
2. Connotation
PD represents the maximum power dissipation an IGBT can withstand without exceeding its maximum junction temperature (Tjmax). This loss primarily includes:
- Switching and conduction losses during IGBT conduction.
- Conduction losses during freewheeling of its internal body diode.
Note: Most manufacturers combine the power dissipation of the IGBT and body diode and provide a single total PD value. However, some manufacturers (such as those using specialized high-speed, low-power diodes) provide separate power dissipation for the IGBT and diode. In this case, users must determine the overall heat dissipation requirements based on the actual application (such as switching frequency).
2.PD Calculation and Factors Influencing PD
PD is not a fixed, absolute value; it is heavily dependent on temperature and heat dissipation conditions.The calculation formula is:
PD = (Tjmax - Tc) / Rth(j-c)
- Tjmax: The maximum allowable junction temperature of the IGBT chip (usually 150°C or 175°C).
- Tc: The module case temperature.
- Rth(j-c): The thermal resistance from junction to case.
Key Point: The PD value is the limit value measured under ideal heat dissipation conditions. If the heat sink is undersized or the heat dissipation conditions are poor (such as high ambient temperature or fan failure), the actual allowable power dissipation of the IGBT will be far lower than the PD value specified in the data sheet. Good heat dissipation design is essential for ensuring the full performance of the IGBT.
3.Important Clarification: Common Misunderstandings
This is a crucial concept that must be understood:
PD is not the output power capability of the IGBT, but rather its maximum power dissipation!
Exceeding the PD value means that the generated heat cannot be dissipated in a timely manner, and the IGBT will be damaged by thermal breakdown due to the unlimited temperature increase.
How does this affect output capacity?
Current Limit: Because the IGBT's on-state voltage drop (Vce(sat)) has a relatively small range of variation, the PD value actually limits its continuous current output capability. Because power dissipation P_loss ≈ I * Vce(sat), the larger the I, the greater the loss.
Unlimited Voltage: As long as the maximum collector-emitter voltage (VCES) is not exceeded, the PD parameter itself does not directly limit the output voltage capability.
Example:
Suppose two IGBTs have exactly the same PD values:
IGBT A: Voltage rating 600V
IGBT B: Voltage rating 1200V
If the on-state voltage drops are similar, then:
At the same output current, IGBT B can operate at a higher maximum bus voltage (e.g., 960V vs. 480V, allowing for a 20% margin).
Therefore, IGBT B's output power capability (Pout = Vbus * I) is much higher than IGBT A's.
5.Summary
Conclusion: When selecting an IGBT, PD/PTOT are key parameters for evaluating its thermal design and long-term reliability. Don't misunderstand it as output power; instead, consider it the core indicator that determines the maximum allowable current and cooling system cost. A correct understanding of PD is the first step in designing efficient and reliable power supplies and drivers.
Shenhuanying's product portfolio includes IGBT wafers, IGBT single tubes, IGBT modules, IPM, high-performance MOSFETs, SiC devices, and related driving and protection technologies. These products are widely used in energy conversion, power electronics, electric vehicles, industrial automation, renewable energy, and many other fields. Our R&D team has extensive experience in the power semiconductor field and continuously pursues innovation and development, providing excellent performance and reliable quality.


