A freewheeling diode (FRD) is essential in parallel with an IGBT to conduct reactive load current, shorten capacitor charging time, and clamp voltage spikes caused by instantaneous load reversal. The IGBT Discretes module addresses this by co-packaging an IGBT chip and a fast recovery diode (FRD) chip on a common copper substrate. To keep pace with the increasing switching speeds of modern power devices, SHYSEMI specifically pairs its IGBTs with FRDs that feature fast turn-on, rapid turn-off, and optimized recovery characteristics—resulting in a short reverse recovery time (trr), a low reverse recovery current (IRRM), and soft recovery behavior.