
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
IGBT Discretes — IGBT + FRD
To keep pace with the increasing switching speeds of modern power devices, SHYSEMI specifically pairs its IGBTs with FRDs that feature fast turn-on, rapid turn-off, and optimized recovery characteristics—resulting in a short reverse recovery time (trr), a low reverse recovery current (IRRM), and soft recovery behavior.
Why Choose SHYSEMI's IGBT Discretes?
A freewheeling diode (FRD) is essential in parallel with an IGBT to conduct reactive load current, shorten capacitor charging time, and clamp voltage spikes caused by instantaneous load reversal. The IGBT Discretes module addresses this by co-packaging an IGBT chip and a fast recovery diode (FRD) chip on a common copper substrate.
TO-220 Package — CS Trench Technology
650V Series (15A-30A) for Motor Drives & UPS. SHYSEMI further ensures safety, stability, and reliability through a rigorous three-layer verification and screening system.
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SYD2065SLB: 650V/20A IGBT delivers low saturation voltage, low loss, built-in fast recovery diode
SYD1565SLA: 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability
SYD1565SL: 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability
SYD3065SLA: 650V/30A IGBT offers low saturation voltage, fast switching, built-in FRD
SYD2065SLA: 650V/20A IGBT delivers low saturation voltage, low switching loss and built-in FRDTO-247 — Optimized for High-Frequency Switching
SHYSEMI's implementation maintains robust power handling while delivering more agile and precise control. With the proliferation of SiC and GaN technologies, the TO-247 Plus has become an indispensable package for designs targeting peak efficiency.
- 1200V Series (15A-75A) for Solar, UPS & EV Charging
- 1350V RC IGBT for Induction Cooking
Download Datasheet
SYD75H120FNB: 1200V/75A trench IGBT, low loss, 10μs SC, fast recovery diode for solar/UPS/welding
SYD40N170TMA1: 700V/40A trench IGBT, low VCEsat, high ruggedness, 10μs SC withstand for EV chargingQuotation or Specification Sheet? Contact Us!
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