
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
IGBT Discretes
Why choose SHYSEMI's IGBT Discretes?
A freewheeling diode (FRD) is essential in parallel with an IGBT to conduct reactive load current, shorten capacitor charging time, and clamp voltage spikes caused by instantaneous load reversal. The IGBT Discretes module addresses this by co-packaging an IGBT chip and a fast recovery diode (FRD) chip on a common copper substrate. To keep pace with the increasing switching speeds of modern power devices, SHYSEMI specifically pairs its IGBTs with FRDs that feature fast turn-on, rapid turn-off, and optimized recovery characteristics—resulting in a short reverse recovery time (trr), a low reverse recovery current (IRRM), and soft recovery behavior.
TO-220
Integrating rectification, braking, driving, and protection, this IGBT discrete,utilizes advanced CS Trench technology and an optimized wafer configuration. By perfectly balancing saturation voltage drop and switching losses, it meets customers' high-efficiency requirements. SHYSEMI further ensures safety, stability, and reliability through a rigorous three-layer verification and screening system.
Choose the Model
SYD2065SLB: 650V/20A IGBT delivers low saturation voltage, low loss, built-in fast recovery diode
SYD3065SLB: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD
SYD1565SLA: 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability
SYD1565SL: 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability
SYD3065SLA: 650V/30A IGBT offers low saturation voltage, fast switching, built-in FRD
SYD2065SLA: 650V/20A IGBT delivers low saturation voltage, low switching loss and built-in FRDTO-247
The TO-247 Plus (also known as TO-247-4L or TO-247AD) is an optimized variant specifically engineered to address the high-frequency switching limitations of the standard TO-247 package. SHYSEMI's implementation maintains robust power handling while delivering more agile and precise control. With the proliferation of SiC and GaN technologies, the TO-247 Plus has become an indispensable package for designs targeting peak efficiency. Consequently, for new high-frequency switching designs, it now represents a near-mandatory selection.
Choose the Model
SYD75H120FNB: 1200V/75A trench IGBT, low loss, 10μs SC, fast recovery diode for solar/UPS/welding
SYD40N170TMA1: 700V/40A trench IGBT, low VCEsat, high ruggedness, 10μs SC withstand for EV charging
SYD40N120LN: 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters
SYD3N020WRH: 1350V/20A RC IGBT with low loss, soft switching, for induction cooking, converter
SYD40H120ADB: 1200V/40A trench IGBT, low saturation voltage, low loss, high reliability for UPS
SYD25H120ADB: 1200V/25A trench IGBT, low VCE(sat), low loss, positive temp coeff for welder/UPS
SYD15H120ADB: 1200V/15A trench IGBT with low loss, positive temp coeff, high reliability for solar
SYD075H065CX1S3: 650V/75A trench IGBT, low VCE(sat), fast switching, 175°C for solar/UPS/welding
SYD060Q065AY1S3: 650V/60A trench IGBT, ultra‑low VCE(sat), fast switching, high‑temp resistant
SYD050Q065AY1S3: 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature
SYD4065RH1: 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching
SYD3065SLW: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD
SYD2065SL: 650V/20A IGBT features low loss, fast switching, built-in FRD, easy parallel for UPSFor More Information or to Get a Product Quotation,
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