• IGBT Discretes — Co-Packaged IGBT + FRD for Compact Power Designs

    To keep pace with the increasing switching speeds of modern power devices, SHYSEMI specifically pairs its IGBTs with FRDs that feature fast turn-on, rapid turn-off, and optimized recovery characteristics—resulting in a short reverse recovery time (trr), a low reverse recovery current (IRRM), and soft recovery behavior.

  • Why choose SHYSEMI's IGBT Discretes?

    A freewheeling diode (FRD) is essential in parallel with an IGBT to conduct reactive load current, shorten capacitor charging time, and clamp voltage spikes caused by instantaneous load reversal. The IGBT Discretes module addresses this by co-packaging an IGBT chip and a fast recovery diode (FRD) chip on a common copper substrate.

  • Packaging List

  • TO-220 Package — CS Trench Technology

    650V Series (15A-30A) for Motor Drives & UPS. SHYSEMI further ensures safety, stability, and reliability through a rigorous three-layer verification and screening system.

  • Download Datasheet

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    SYD2065SLB: 650V/20A IGBT delivers low saturation voltage, low loss, built-in fast recovery diode
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    SYD3065SLB: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD
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    SYD1565SLA: 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability
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    SYD1565SL: 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability
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    SYD3065SLA: 650V/30A IGBT offers low saturation voltage, fast switching, built-in FRD
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    SYD2065SLA: 650V/20A IGBT delivers low saturation voltage, low switching loss and built-in FRD

  • TO-247 — Optimized for High-Frequency Switching

    SHYSEMI's implementation maintains robust power handling while delivering more agile and precise control. With the proliferation of SiC and GaN technologies, the TO-247 Plus has become an indispensable package for designs targeting peak efficiency.

    • 1200V Series (15A-75A) for Solar, UPS & EV Charging
    • 1350V RC IGBT for Induction Cooking

  • Download Datasheet

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    SYD75H120FNB: 1200V/75A trench IGBT, low loss, 10μs SC, fast recovery diode for solar/UPS/welding
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    SYD40N170TMA1: 700V/40A trench IGBT, low VCEsat, high ruggedness, 10μs SC withstand for EV charging
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    SYD40N120LN: 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters
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    SYD3N020WRH: 1350V/20A RC IGBT with low loss, soft switching, for induction cooking, converter
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    SYD40H120ADB: 1200V/40A trench IGBT, low saturation voltage, low loss, high reliability for UPS
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    SYD25H120ADB: 1200V/25A trench IGBT, low VCE(sat), low loss, positive temp coeff for welder/UPS
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    SYD15H120ADB: 1200V/15A trench IGBT with low loss, positive temp coeff, high reliability for solar
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    SYD075H065CX1S3: 650V/75A trench IGBT, low VCE(sat), fast switching, 175°C for solar/UPS/welding
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    SYD060Q065AY1S3: 650V/60A trench IGBT, ultra‑low VCE(sat), fast switching, high‑temp resistant
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    SYD050Q065AY1S3: 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature
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    SYD4065RH1: 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching
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    SYD3065SLW: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD
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    SYD2065SL: 650V/20A IGBT features low loss, fast switching, built-in FRD, easy parallel for UPS

  • Quotation or Specification Sheet? Contact Us!

    SHYSEMI is a professional semiconductor product manufacturer, and our factories and engineers will do their best to meet your needs.

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