• IGBT Discretes

    Why choose SHYSEMI's IGBT Discretes?

    A freewheeling diode (FRD) is essential in parallel with an IGBT to conduct reactive load current, shorten capacitor charging time, and clamp voltage spikes caused by instantaneous load reversal. The IGBT Discretes module addresses this by co-packaging an IGBT chip and a fast recovery diode (FRD) chip on a common copper substrate. To keep pace with the increasing switching speeds of modern power devices, SHYSEMI specifically pairs its IGBTs with FRDs that feature fast turn-on, rapid turn-off, and optimized recovery characteristics—resulting in a short reverse recovery time (trr), a low reverse recovery current (IRRM), and soft recovery behavior.

  • Package List

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    TO-220

    Main package IGBT and diode high voltage MOSFET, COOLMOS

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    TO-220F

    Main package IGBT and diode high voltage MOSFET, COOLMOS

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    TO-247

    Main packages IGBT and fast recovery diodes SJMOSFET

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    TO-247-3Plus

    Main packages IGBT, SiCMOS, COOLMOS

  • TO-220 Applications:

    Integrating rectification, braking, driving, and protection, this IGBT discrete，utilizes advanced CS Trench technology and an optimized wafer configuration. By perfectly balancing saturation voltage drop and switching losses, it meets customers' high-efficiency requirements. SHYSEMI further ensures safety, stability, and reliability through a rigorous three-layer verification and screening system.

    • UPS
    • PFC
    • Motor Control

    SYD1565SLP

    • Package：TO-220
    • Voltage(V): 650
    • Current(A): 15
    • VCE(SAT)@typ.Tj=25°C: 1.8
    • VGEth@typ.Tj=25°C: 6

    SYD2065SLA

    • Package：TO-220
    • Voltage(V): 650
    • Current(A): 20
    • VCE(SAT)@typ.Tj=25°C: 1.7
    • VGEth@typ.Tj=25°C: 5.5

    SYD3065SLA

    • Package：TO-220
    • Voltage(V): 650
    • Current(A): 30
    • VCE(SAT)@typ.Tj=25°C: 1.9
    • VGEth@typ.Tj=25°C: 4

  • Features:

    • Saturation Voltage Drop: Positive Temperature Coefficient
    • Easy to Use in Parallel Circuits
    • Low Switching Loss
    • Built-in Fast Recovery Diode
    • High Reliability and Thermal Stability
    • Good Parameter Consistency
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  • TO-220F Applications:

    The TO-220 stands as a quintessential and ubiquitous package in the power semiconductor industry. SHYSEMI's TO-220 offerings exemplify this legacy, providing versatile and user-friendly solutions with unparalleled cost-effectiveness. Owing to its massive production scale and exceptionally mature technology, this package is integral to nearly every electronic device managing power from a few watts to several hundred watts.

    • UPS
    • PFC
    • Motor Control

  • SYD1565SLA

    • Package：TO-220F
    • Voltage(V): 650
    • Current(A): 15
    • VCE(SAT)@typ.Tj=25°C: 1.8
    • VGEth@typ.Tj=25°C: 6

    SYD2065SLB

    • Package：TO-220F
    • Voltage(V): 650
    • Current(A): 20
    • VCE(SAT)@typ.Tj=25°C: 1.7
    • VGEth@typ.Tj=25°C: 5.5

    SYD3065SLB

    • Package：TO-220F
    • Voltage(V): 650
    • Current(A): 30
    • VCE(SAT)@typ.Tj=25°C: 1.9
    • VGEth@typ.Tj=25°C: 4.0

  • Features:

    • Saturation Voltage Drop: Positive Temperature Coefficient
    • Easy to Use in Parallel Circuits
    • Low Switching Loss
    • Built-in Fast Recovery Diode
    • High Reliability and Thermal Stability
    • Good Parameter Consistency
    • Minimum Short Circuit Protection Time 5µs
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  • TO-247 Applications:

    The TO-247 is essentially an upscaled variant of the TO-220 package, designed to support substantially higher power and current ratings. It incorporates thicker pins and larger internal interconnects (bonding wires or copper clips), allowing it to carry currents several times greater than the TO-220. By utilizing a single-screw mounting mechanism, it can be securely attached to a substantial heatsink, making it the primary choice for both air-cooled and basic liquid-cooled thermal solutions.

    • Solar Converter
    • Uninterrupted Power Supply
    • Welding Converter
    • Mid to High Range Switching Frequency Converter

  • SYD2065SLW

    • Package：TO-247-3L
    • Voltage(V): 650
    • Current(A): 20
    • VCE(SAT)@typ.Tj=25°C: 1.7
    • VGEth@typ.Tj=25°C: 5.5

    SYD3065SLW

    • Package：TO-247-3L
    • Voltage(V): 650
    • Current(A): 30
    • VCE(SAT)@typ.Tj=25°C: 1.9
    • VGEth@typ.Tj=25°C: 4

    SYD040Q065AY1S3

    • Package：TO-247-3L
    • Voltage(V): 650
    • Current(A): 400
    • VCE(SAT)@typ.Tj=25°C: 1.9
    • VGEth@typ.Tj=25°C: 4.5

    SYD050Q065AY1S3

    • Package：TO-247-3L
    • Voltage(V): 650
    • Current(A): 50
    • VCE(SAT)@typ.Tj=25°C: 1.8
    • VGEth@typ.Tj=25°C: 4.5

    SYD060Q065AY1S3

    • Package：TO-247-3L
    • Voltage(V): 650
    • Current(A): 60
    • VCE(SAT)@typ.Tj=25°C: 1.6
    • VGEth@typ.Tj=25°C: 4.5

    SYD075H065CX1S3

    • Package：TO-247-3L
    • Voltage(V): 650
    • Current(A): 75
    • VCE(SAT)@typ.Tj=25°C: 1.65
    • VGEth@typ.Tj=25°C: 4.5

    SYD15H120ADB

    • Package：TO-247-3L
    • Voltage(V): 1200
    • Current(A): 15
    • VCE(SAT)@typ.Tj=25°C: 1.85
    • VGEth@typ.Tj=25°C: 5.9

    SYD25H120ADB

    • Package：TO-247-3L
    • Voltage(V): 1200
    • Current(A): 25
    • VCE(SAT)@typ.Tj=25°C: 1.8
    • VGEth@typ.Tj=25°C: 6

    SYD40H120ADB

    • Package：TO-247-3L
    • Voltage(V): 1200
    • Current(A): 40
    • VCE(SAT)@typ.Tj=25°C: 1.6
    • VGEth@typ.Tj=25°C: 5.5

    SYD3N020WRH

    • Package：TO-247-3L
    • Voltage(V): 1350
    • Current(A): 20
    • VCE(SAT)@typ.Tj=25°C: 1.66
    • VGEth@typ.Tj=25°C: 6.1

    SYD40N120LN

    • Package：TO-247-3
    • Voltage(V): 1200
    • Current(A): 40
    • VCE(SAT)@typ.Tj=25°C: 1.9
    • VGEth@typ.Tj=25°C: 5

    SYD4065RH1

    • Package：TO-247-3
    • Voltage(V): 650
    • Current(A): 40
    • VCE(SAT)@typ.Tj=25°C: 2
    • VGEth@typ.Tj=25°C: 5

  • Features:

    • Low VCE (sat) Trench IGBT Technology
    • Low Switching Loss
    • Low Stray Inductance
    • Maximum Junction Temperature 175℃
    • Positive VCE(sat) Temperature Coefficient
    • Lead Free, Compliant with RoHS Requirement
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  • TO-247 Plus Applications:

    The TO-247 Plus (also known as TO-247-4L or TO-247AD) is an optimized variant specifically engineered to address the high-frequency switching limitations of the standard TO-247 package. SHYSEMI's implementation maintains robust power handling while delivering more agile and precise control. With the proliferation of SiC and GaN technologies, the TO-247 Plus has become an indispensable package for designs targeting peak efficiency. Consequently, for new high-frequency switching designs, it now represents a near-mandatory selection.

    • Uninterrupted Power Supply
    • Solar Inverters
    • Inverter Welding Machine
    • PFC

  • SYD75H120FNB

    • Package：TO-247 Plus
    • Voltage(V): 1200
    • Current(A): 75
    • VCE(SAT)@typ.Tj=25°C: 1.85
    • VGEth@typ.Tj=25°C: 5.7

  • Features:

    • Low VCE (sat) Trench IGBT Technology
    • Low Switching Loss
    • 10μs Short Circuit SOA
    • Square RBSOA
    • Positive VCE(sat) Temperature Coefficient
    • Tight Parameter Distribution
    • Low Thermal Resistance
    • Very Fast Recovery Antiparallel Diode
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