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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

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    • Home
    • Products 
      • IPM Modules
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • Energy Vehicle
      • Home Appliance
      • Renewable Energy
      • Industrial Equipment
      • Data Centers
    • Technology 
      • Latest IPM Technology
      • High Voltage (HV) Die Technolog
      • Reliability & Qualification
    • About Us 
      • Our Company
      • Technical Team
      • Custom Solutions
    • Contact Us
    • Blog
Free Sample
WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM Modules
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
  • Technology 
    • Latest IPM Technology
    • High Voltage (HV) Die Technolog
    • Reliability & Qualification
  • About Us 
    • Our Company
    • Technical Team
    • Custom Solutions
  • Contact Us
  • Blog
  • …  
    • Home
    • Products 
      • IPM Modules
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • Energy Vehicle
      • Home Appliance
      • Renewable Energy
      • Industrial Equipment
      • Data Centers
    • Technology 
      • Latest IPM Technology
      • High Voltage (HV) Die Technolog
      • Reliability & Qualification
    • About Us 
      • Our Company
      • Technical Team
      • Custom Solutions
    • Contact Us
    • Blog
Free Sample
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
  • IGBT Discretes

  • Why choose SHYSEMI's IGBT Discretes?

    A freewheeling diode (FRD) is essential in parallel with an IGBT to conduct reactive load current, shorten capacitor charging time, and clamp voltage spikes caused by instantaneous load reversal. The IGBT Discretes module addresses this by co-packaging an IGBT chip and a fast recovery diode (FRD) chip on a common copper substrate. To keep pace with the increasing switching speeds of modern power devices, SHYSEMI specifically pairs its IGBTs with FRDs that feature fast turn-on, rapid turn-off, and optimized recovery characteristics—resulting in a short reverse recovery time (trr), a low reverse recovery current (IRRM), and soft recovery behavior.

  • TO-220

    Integrating rectification, braking, driving, and protection, this IGBT discrete,utilizes advanced CS Trench technology and an optimized wafer configuration. By perfectly balancing saturation voltage drop and switching losses, it meets customers' high-efficiency requirements. SHYSEMI further ensures safety, stability, and reliability through a rigorous three-layer verification and screening system.

  • Choose the Model

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    SYD2065SLB: 650V/20A IGBT delivers low saturation voltage, low loss, built-in fast recovery diode
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    SYD3065SLB: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD
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    SYD1565SLA: 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability
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    SYD1565SL: 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability
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    SYD3065SLA: 650V/30A IGBT offers low saturation voltage, fast switching, built-in FRD
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    SYD2065SLA: 650V/20A IGBT delivers low saturation voltage, low switching loss and built-in FRD
  • TO-247

    The TO-247 Plus (also known as TO-247-4L or TO-247AD) is an optimized variant specifically engineered to address the high-frequency switching limitations of the standard TO-247 package. SHYSEMI's implementation maintains robust power handling while delivering more agile and precise control. With the proliferation of SiC and GaN technologies, the TO-247 Plus has become an indispensable package for designs targeting peak efficiency. Consequently, for new high-frequency switching designs, it now represents a near-mandatory selection.

  • Choose the Model

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    SYD75H120FNB: 1200V/75A trench IGBT, low loss, 10μs SC, fast recovery diode for solar/UPS/welding
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    SYD40N170TMA1: 700V/40A trench IGBT, low VCEsat, high ruggedness, 10μs SC withstand for EV charging
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    SYD40N120LN: 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters
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    SYD3N020WRH: 1350V/20A RC IGBT with low loss, soft switching, for induction cooking, converter
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    SYD40H120ADB: 1200V/40A trench IGBT, low saturation voltage, low loss, high reliability for UPS
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    SYD25H120ADB: 1200V/25A trench IGBT, low VCE(sat), low loss, positive temp coeff for welder/UPS
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    SYD15H120ADB: 1200V/15A trench IGBT with low loss, positive temp coeff, high reliability for solar
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    SYD075H065CX1S3: 650V/75A trench IGBT, low VCE(sat), fast switching, 175°C for solar/UPS/welding
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    SYD060Q065AY1S3: 650V/60A trench IGBT, ultra‑low VCE(sat), fast switching, high‑temp resistant
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    SYD050Q065AY1S3: 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature
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    SYD4065RH1: 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching
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    SYD3065SLW: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD
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    SYD2065SL: 650V/20A IGBT features low loss, fast switching, built-in FRD, easy parallel for UPS
  • For More Information or to Get a Product Quotation,

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Products

IPM

IGBT Modules

IGBT Discretes

IGBT Chip

SiC MOS

SiC Module

FRD / MUR

FRD Chip

Bridge Rectifier

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SHYSEMI is striving to become a world-leading semiconductor supplier.

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