The Development and Application of New Energy and IGBT Technology
Entering the 21st century, new energy sources such as wind power and solar energy have become the key direction for global energy structure adjustment. Traditional power transmission technologies are unable to meet the demand for large-scale integration of new energy sources, while flexible AC transmission and high-voltage DC transmission based on high-voltage high-power power electronics technology have become the core technologies of smart grids.
IGBT devices, with their superior gate control, low on-state losses, and rapidly improving voltage and current parameters, have become the preferred choice for large-power power electronics technology. They can save energy and improve power efficiency, and are hailed as the third revolution in power electronics technology. However, as their applications become widespread, the performance requirements for IGBTs have been increasing, and engineers have begun the matching technology between IGBT and MUR/FRD to improve the performance of the entire system.
Advantages and Characteristics of IGBT and MUR/FRD Matching Technology
The IGBT and MUR/FRD matching technology is a new type of technology that, based on specific IGBT chips, reasonably designs the structural parameters, packaging parameters, and circuit parameters of MUR/FRD for different power applications. However, the matching between IGBT and MUR/FRD not only requires considering the matching relationship between the devices, but also needs to comprehensively consider the influence of the external circuit on the device characteristics.
Several optimization methods of IGBT and MUR/FRD matching technology:
- Select MUR with the rated parameters (voltage, current, frequency) consistent with IGBT;
- Reduce the drive gate resistor;
- Reduce the parasitic inductance (collector-base) when IGBT and MUR/FRD are connected in parallel;
- Consider the parasitic capacitance of the IGBT and MUR/FRD in-parallel connection in the circuit design;
- According to the application requirements of IGBT and MUR/FRD, reasonably design the parameters of the external circuit (capacitance, inductance, resistance, etc.).
In addition, we can also try the following:
- Design a more reasonable chip structure, change the structure of the IGBT chip and the soft parameters of MUR/FRD to reduce losses and improve reliability;
- Improve the packaging design;
- Select reasonable matching parameters under the existing conditions of IGBT and MUR/FRD on the market.
IGBT is the mainstream power device of modern inverters, and MUR is an indispensable partner for it. The advantage of IGBT and MUR/FRD matching technology lies in its application to any scenarios involving IGBT applications, such as new energy grid integration, grid interconnection, and high-voltage frequency conversion, helping to achieve energy conservation and emission reduction.
Development Trends
With the development of IGBT and MUR/FRD, their voltage ratings, current capacity, and switching frequencies have been further improved. The requirements for the matching between IGBT and MUR/FRD have become more stringent. In such an environment, the development of IGBT chips will drive the development of MUR/FRD chips to achieve the common development of matching technology. SHYSEMI believes that the development trend of IGBT and MUR/FRD matching includes:
- Replace MUR/FRD with silicon carbide diodes, and experiments have proved that the total energy consumption of 1200V IGBT modules can be reduced by 20%-40%;
- Optimize the module structure using new materials, requiring the parasitic inductance and capacitance of the module structure to be small at higher junction temperatures, such as silicon carbide, gallium nitride;
- Improve the device structure of IGBT and MUR/FRD and develop new modules to reduce losses.
Summary
The matching technology between IGBT and MUR/FRD is crucial for enhancing the performance of power electronic devices. In the future, through the use of new materials and structural optimization, the development of energy conservation and stability will be further promoted.