• SHYSEMI's silicon carbide (SiC) MOSFETs provide transformative advantages for data center power infrastructure. By enabling high-frequency operation with minimal switching losses, they can boost the efficiency of server power supply units (PSUs) and uninterruptible power supplies (UPS) beyond 98%. This high efficiency translates into a direct reduction of energy losses by up to 40% compared to traditional silicon-based solutions, significantly lowering operating expenses (OPEX) and Power Usage Effectiveness (PUE).

    Data Center Power

    • Efficiency increased by 98%
    • Reduce energy loss by 40%
    • Power density increased by 50%

  • Replacement list of Models with Industry's Top Enterprises

    SHYSEMI is committed to sustainability and strives to minimize its environmental impact. It actively supports the development of clean energy and green technologies.

  • Block Diagram

    SHYSEMI employ 48 V DC architectures and advanced SiC-based conversion to enhance power density. Use of fast-recovery devices minimizes downtime and improves total cost of ownership.

    Benefits

    SHYSEMI employ 48 V DC architectures and advanced SiC-based conversion to enhance power density. Use of fast-recovery devices minimizes downtime and improves total cost of ownership.

    • BOM savings and lower system costs
    • High computing performance per watt
    • Ultra-high efficiency, lower opex
    • Available Si, SiC, or GaN solutions
    • Improved transient response

  • Recommend Products: SiC MOS

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