• SHYSEMI's silicon carbide (SiC) MOSFETs provide transformative advantages for data center power infrastructure. By enabling high-frequency operation with minimal switching losses, they can boost the efficiency of server power supply units (PSUs) and uninterruptible power supplies (UPS) beyond 98%. This high efficiency translates into a direct reduction of energy losses by up to 40% compared to traditional silicon-based solutions, significantly lowering operating expenses (OPEX) and Power Usage Effectiveness (PUE).

    Server Power Supplies

    • Efficiency increased by 98%
    • Reduce energy loss by 40%
    • Power density increased by 50%

  • Block Diagram

    SHYSEMI employ 48 V DC architectures and advanced SiC-based conversion to enhance power density. Use of fast-recovery devices minimizes downtime and improves total cost of ownership.

    Benefits

    SHYSEMI employ 48 V DC architectures and advanced SiC-based conversion to enhance power density. Use of fast-recovery devices minimizes downtime and improves total cost of ownership.

    • BOM savings and lower system costs
    • High computing performance per watt
    • Ultra-high efficiency, lower opex
    • Available Si, SiC, or GaN solutions
    • Improved transient response

  • Recommend Products: SiC MOS

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