• SHYSEMI's silicon carbide (SiC) MOSFETs offer significant performance advantages for modern communication base stations. Thanks to their high-frequency switching capability and low conduction losses, SHYSEMI's SiC devices can achieve power conversion efficiencies exceeding 98% in key applications like power amplifier supply and AC/DC rectification. This high efficiency directly translates into energy savings, reducing power losses by up to 30% compared to conventional silicon-based solutions.

    Server Power Supplies

    • Increasing power density
    • Power conversion efficiencies ＞ 98%
    • Reducing power losses ＞ 30%

  • Block Diagram

    The superior thermal conductivity of SiC allows for up to a 50% reduction in heatsink size and weight, significantly increasing power density while maintaining reliability. These benefits lead to a more compact base station design, lower operational costs, and improved long-term stability in demanding 5G and future network environments.

    Benefits

    A power supply unit (PSU) is an essential component, providing the energy and stability needed for the reliable operation of your entire system.

    SHYSEMI's IGBT and FRD modules ensure stable PFC and inverter performance.

    • High Blocking Voltage With Low On-Resistance
    • High-Speed Switching With Low Capacitances
    • Fast Intrinsic Diode With Low Reverse Recovery(Qrr)
    • Halogen Free, RoHS Compliant
    • Easy to Control Gate Switching

  • Recommend Products: SiC MOS

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