• IGBT Chip

    Why choose SHYSEMI's IGBT Chips?

    SHYSEMI leverages its proprietary sixth-generation Trench Field Stop IGBT chip technology to deliver industry-leading performance across its 1200V to 1700V product portfolio. Notably, its 1700V series stands at the forefront of domestic technology, featuring a superior Vce(sat) coefficient and enhanced energy efficiency compared to other local solutions.

    Through its strategic partnership with Huahong Group, the company utilizes leading domestic wafer fabs for production, implementing a rigorous quality control system to ensure outstanding product reliability. A key technological advantage is the ability to achieve a voltage rating increase from 1200V to 1700V within an identical die size, offering customers significant design flexibility and backward compatibility.

    SHYSEMI provides comprehensive packaging & testing solutions and supports customized chip development. This is complemented by the provision of wafer-level CP (Circuit Probe) test data, which accelerates customer product verification and system integration processes.

  • Chip List

    Section image

    NPT

    Non-Punch Through IGBT:

    Low cost

    Low frequency

    High reliability applications

    Section image

    TR/FS

    Trench Field Stop:

    Higher system efficiency

    Smaller device size

    Greater overload and parallel capabilities

    Lower overall costs

  • NPT Chip

    The Non-Punch-Through (NPT) IGBT structure is characterized by an inherent positive temperature coefficient, meaning its on-state voltage drop Vce(sat) rises with temperature. This property facilitates automatic current sharing among parallel-connected chips, thereby preventing thermal runaway and enhancing system reliability. Furthermore, the manufacturing process for NPT devices is comparatively straightforward and cost-effective. Despite this, they retain a soft turn-off characteristic, which contributes to their robust short-circuit withstand capability.

    • Welding Machine
    • Cutting Machine
    • Induction Heating
    • UPS Power

    SYC20PN65WK

    • Size(Inch): 6
    • Type: Std
    • Voltage(V): 650
    • Current(A): 20
    • Effective Die Quantity: 709

    SYC30PN65WK

    • Size(Inch): 6
    • Type: Std
    • Voltage(V): 650
    • Current(A): 30
    • Effective Die Quantity: 525

    SYC50PN65WK

    • Size(Inch): 6
    • Type: Std
    • Voltage(V): 650
    • Current(A): 50
    • Effective Die Quantity: 327

    SYC75PN65WK1

    • Size(Inch): 6
    • Type: Std
    • Voltage(V): 650
    • Current(A): 75
    • Effective Die Quantity: 231

    SYC100PN65WK

    • Size(Inch): 6
    • Type: Std
    • Voltage(V): 650
    • Current(A): 75
    • Effective Die Quantity: 168

    SYC50PN120WHF

    • Size(Inch): 6
    • Type: Ultra Fast
    • Voltage(V): 1200
    • Current(A): 50
    • Effective Die Quantity: 154

    SYC50PN120WU

    • Size(Inch): 6
    • Type: Fast
    • Voltage(V): 1200
    • Current(A): 50
    • Effective Die Quantity: 157

    SYC75PN120WHF

    • Size(Inch): 6
    • Type: Ultra Fast
    • Voltage(V): 1200
    • Current(A): 75
    • Effective Die Quantity: 154

    SYC75PN120WF

    • Size(Inch): 6
    • Type: Fast
    • Voltage(V): 1200
    • Current(A): 75
    • Effective Die Quantity: 82

    SYC100PN120WHF

    • Size(Inch): 6
    • Type: Fast
    • Voltage(V): 1200
    • Current(A): 100
    • Effective Die Quantity: 69

    SYC100PN120WHF1

    • Size(Inch): 6
    • Type: Fast
    • Voltage(V): 1200
    • Current(A): 100
    • Effective Die Quantity: 69

  • Features:

    • Non Punch Through (NPT) Technology
    • Low Vce (sat)
    • 10µs Short Circuit Capability
    • Square RBSOA
    • Positive Vce(sat) Temperature Coefficient

  • TR/FS

    Trench Field Stop (TFS) IGBT technology represents the mainstream solution for contemporary medium- to high-voltage applications. By utilizing a thin silicon wafer and an integrated Field Stop layer, it effectively shortens the duration and reduces the amplitude of the tail current during turn-off, which significantly decreases turn-off losses. This reduction in losses allows the device to operate at higher switching frequencies without exceeding thermal limits.

    Furthermore, through optimized carrier engineering and enhanced switching dynamics, TFS IGBTs achieve safer turn-off under elevated current and voltage conditions. This results in a wider Reverse Bias Safe Operating Area (RBSOA), thereby substantially improving system robustness during fault or abnormal operating scenarios.

    • Inverter for Motor Driver
    • Servo Driver
    • High Power Converters
    • Wind Turbines
    • Induction Heating/HF Power

  • SYC100P120C4WK

    • Size(Inch): 12
    • Type: Std
    • Voltage(V): 1200
    • Current(A): 100
    • Effective Die Quantity: 560

    SYC150P120C4WF

    • Size(Inch): 12
    • Type: Fast
    • Voltage(V): 1200
    • Current(A): 150
    • Effective Die Quantity: 410

    SYC150P120C4WK

    • Size(Inch): 12
    • Type: Std
    • Voltage(V): 1200
    • Current(A): 150
    • Effective Die Quantity: 410

    SYC100P170C4WK

    • Size(Inch): 12
    • Type: Std
    • Voltage(V): 1700
    • Current(A): 100
    • Effective Die Quantity: 560

    SYC150P170H4WK

    • Size(Inch): 8
    • Type: Std
    • Voltage(V): 1700
    • Current(A): 150
    • Effective Die Quantity: 158

    SYC200P170H4WK

    • Size(Inch): 8
    • Type: Std
    • Voltage(V): 1700
    • Current(A): 200
    • Effective Die Quantity: 112

    SYC50P120H4WK

    • Size(Inch): 8
    • Type: Std
    • Voltage(V): 1200
    • Current(A): 50
    • Effective Die Quantity: 562

    SYC50P120H4WF

    • Size(Inch): 8
    • Type: Std
    • Voltage(V): 1200
    • Current(A): 50
    • Effective Die Quantity: 562

    SYC75P120G4WK1

    • Size(Inch): 8
    • Type: Std
    • Voltage(V): 1200
    • Current(A): 75
    • Effective Die Quantity: 336

    SYC75P120G4WF1

    • Size(Inch): 8
    • Type: Fast
    • Voltage(V): 1200
    • Current(A): 75
    • Effective Die Quantity: 342

    SYC100P120H4WHF

    • Size(Inch): 8
    • Type: Fast
    • Voltage(V): 1200
    • Current(A): 100
    • Effective Die Quantity: 227

    SYC150P120C4PF

    • Size(Inch): 12
    • Type: Fast
    • Voltage(V): 1200
    • Current(A): 150
    • Effective Die Quantity: 410

    SYC50P170H4WK

    • Size(Inch): 8
    • Type: Std
    • Voltage(V): 1700
    • Current(A): 50
    • Effective Die Quantity: 600

    SYC75P170G4WK2

    • Size(Inch): 8
    • Type: Std
    • Voltage(V): 1700
    • Current(A): 75
    • Effective Die Quantity: 316

  • Features:

    • Trench FS Technology
    • Low Vce(sat)
    • 10µs Short Circuit Capability
    • Parallel Suitable
    • Positive Vce(sat) Temperature Coefficient
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