• IGBT Chips

    SHYSEMI provides comprehensive packaging & testing solutions and supports customized chip development.

    This is complemented by the provision of wafer-level CP (Circuit Probe) test data, which accelerates customer product verification and system integration processes.

  • Why choose SHYSEMI's IGBT Chips?

    SHYSEMI leverages its proprietary sixth-generation Trench Field Stop IGBT chip technology to deliver industry-leading performance across its 1200V to 1700V product portfolio. Notably, its 1700V series stands at the forefront of domestic technology, featuring a superior Vce(sat) coefficient and enhanced energy efficiency compared to other local solutions.

    Through its strategic partnership with Huahong Group, the company utilizes leading domestic wafer fabs for production, implementing a rigorous quality control system to ensure outstanding product reliability. A key technological advantage is the ability to achieve a voltage rating increase from 1200V to 1700V within an identical die size, offering customers significant design flexibility and backward compatibility.

  • Chip List

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    NPT (Non-Punch Through IGBT)

    Low cost

    Low frequency

    High reliability applications

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    TR/FS (Trench Field Stop)

    Higher system efficiency

    Smaller device size

    Greater overload and parallel capabilities

    Lower overall costs

  • NPT Chip

    The Non-Punch-Through (NPT) IGBT structure is characterized by an inherent positive temperature coefficient, meaning its on-state voltage drop Vce(sat) rises with temperature. This property facilitates automatic current sharing among parallel-connected chips, thereby preventing thermal runaway and enhancing system reliability. Furthermore, the manufacturing process for NPT devices is comparatively straightforward and cost-effective. Despite this, they retain a soft turn-off characteristic, which contributes to their robust short-circuit withstand capability.

  • Choose the Model

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    [SYC100PN120WHF] 1200V 100A NPT Fast IGBT chip, low Etotal, 10μs short‑circuit, for welding, heating
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    [SYC75PN120WF] 1200V/75A NPT Fast IGBT chip, low Etotal, 10μs short‑circuit, for welding, UPS
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    [SYC75PN120WHF] 1200V 75A NPT Fast IGBT chip, low Etotal, 10μs short‑circuit, for induction heating
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    [SYC50PN120WU] 1200V/50A NPT UltraFast IGBT chip, low Vce(sat), 10μs short‑circuit, for welding
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    [SYC50PN120WHF] 1200V 50A NPT UltraFast IGBT chip, 10μs short‑circuit, for welding
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    [SYC100PN65WK] 650V 100A fast IGBT chip for inverters, motor drives, and industrial power systems
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    [SYC75PN65WK1] 650V 75A NPT IGBT chip for motor drives, inverters, and industrial power systems
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    [SYC50PN65WK] 650V 50A NPT IGBT chip with 10μs short-circuit, low Vce(sat), for motor drives
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    [SYC30PN65WK] 650V/30A NPT IGBT chip with low Vce(sat), 10μs short-circuit, for motor drives
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    [SYC20PN65WK] 650V 20A NPT IGBT chip, low Vce(sat), 10μs short‑circuit, for industrial motor control

  • TR/FS

    Trench Field Stop (TFS) IGBT technology represents the mainstream solution for contemporary medium- to high-voltage applications. By utilizing a thin silicon wafer and an integrated Field Stop layer, it effectively shortens the duration and reduces the amplitude of the tail current during turn-off, which significantly decreases turn-off losses. This reduction in losses allows the device to operate at higher switching frequencies without exceeding thermal limits.

    Furthermore, through optimized carrier engineering and enhanced switching dynamics, TFS IGBTs achieve safer turn-off under elevated current and voltage conditions. This results in a wider Reverse Bias Safe Operating Area (RBSOA), thereby substantially improving system robustness during fault or abnormal operating scenarios.

  • Choose the Model

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    [SYC50P120H4WK] 1200V 50A Trench FS IGBT chip, low Vce(sat), for motor & servo drives
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    [SYC50P120H4WF] 1200V 50A Trench FS IGBT chip, low Eswitch, 10μs short‑circuit, for EV chargers, BMS
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    [SYC50P170H4WK] 1700V 50A Trench FS IGBT chip, low Vce(sat), 10μs short‑circuit, for servo drives
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    [SYC75P120G4WF1] 1200V 75A Trench FS IGBT chip, low Eoff, 10μs short‑circuit, for welding & UPS
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    [SYC75P120G4WK1] 1200V 75A Trench FS IGBT chip, low Vce(sat), 10μs short‑circuit, for servo drives
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    [SYC75P170G4WK2] 1700V 75A Trench FS IGBT chip, low Vce(sat), for motor & servo drives
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    [SYC100P120H4WHF] 1200V 100A Trench FS IGBT chip, low Eoff, 10μs short‑circuit, for welding machine
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    [SYC150P170H4WK] 1700V 150A Trench FS IGBT chip, low Vce(sat), 10μs short‑circuit, for motor drives
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    [SYC200P170H4WK] 1700V 200A Trench FS IGBT chip, low Vce(sat), 10μs short‑circuit, for UPS, turbines
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    [SYC100P120C4WK] 1200V 100A Trench FS IGBT chip, ultra‑low Vce(sat), 10μs short‑circuit, for motor
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    [SYC150P120C4WF] 1200V 150A Trench FS IGBT chip, low Eoff, for welding & induction heating
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    [SYC150P120C4PF] 1200V 150A Trench FS IGBT chip, low Eoff, for welding & high‑frequency power
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    [SYC100P170C4WK] 1700V 100A Trench FS IGBT chip, low Vce(sat), 10μs short‑circuit, for servo drives
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    [SYC150P120C4WK] 1200V 150A Trench FS IGBT chip, ultra‑low Vce(sat), 10μs short‑circuit, for motor
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