• SiC MOS

    Why choose SHYSEMI's SiC MOS?

    SiC MOSFETs are not merely an "improvement" over silicon devices, but a true paradigm shift. Through breakthroughs at the material level, SiC technology simultaneously addresses multiple challenges in power electronics — including efficiency, switching frequency, size, and thermal performance. This is the most significant advantage of SiC MOSFETs: their switching (turn-on and turn-off) is extremely fast and crisp, with virtually no "current tailing."

    SHYSEMI's SiC MOSFET HPD modules have entered mass production at the Beijing Automotive Research Institute. These HPD modules can improve inverter efficiency by 5% to 8%, and offer significant advantages in high power density, high-temperature operation, fast switching, and simplified circuit design.

  • Package List

    Section image

    TO-247-3L

    Classic three-pin layout

    Wide range of models

    Abundant stock

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    TO-247-4L

    High efficiency

    High power density

    Elimination of gate oscillation

  • TO-247 Applications:

    The TO-247 stands as a quintessential and ubiquitous high-performance discrete package in power semiconductors. It embodies a near-optimal equilibrium between power handling, thermal performance, reliability, and cost-effectiveness—a balance rigorously proven over decades. This exceptional all-round performance continues to make it a dominant choice for high-power applications. Today, the TO-247 has evolved into a family of variants. The key distinctions lie in pin count and functional integration, which SHYSEMI leverages across its portfolio to deliver optimized solutions for diverse industry applications.

    • Solar Inverters
    • Switched Mode Power Supplies
    • High Voltage DC/DC Converters
    • Battery Chargers
    • Motor Drives
    • Pulsed Power Applications
    • Weliding
    • EV Charging

    SYSD040120-R

    • Package：TO-247-3L
    • Voltage(V): 1200
    • RDS(ON), TYP: 30

    SYSD170N022AG1

    • Package：TO-247-3L/4L
    • Voltage(V): 1700
    • RDS(ON), TYP: 22

  • Features:

    • High Blocking Voltage With Low On-Resistance
    • High-Speed Switching With Low Capacitances
    • Fast Intrinsic Diode With Low Reverse Recovery(Qrr)
    • Halogen Free, RoHS Compliant
    • Easy to Control Gate Switching
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  • TO-247 Applications:

    The TO-247-4L design addresses the core issue of high-frequency switching by adding one more pin, making it a crucial technical guarantee for achieving high efficiency and high power density. For all new designs based on SiC, it is almost always a mandatory option.

    • Solar Inverters
    • Switched Mode Power Supplies
    • High Voltage DC/DC Converters
    • Battery Chargers
    • Motor Drives
    • Pulsed Power Applications
    • Weliding
    • EV Charging

    SYSD040120-J

    • Package：TO-247-4L
    • Voltage(V): 1200
    • RDS(ON), TYP: 40

    SYSD120N015A

    • Package：TO-247-4L
    • Voltage(V): 1200
    • RDS(ON), TYP: 15

    SYSD080N120T44

    • Package：TO-247-4L
    • Voltage(V): 1200
    • RDS(ON), TYP: 80

    SYSD065N030THF

    • Package：TO-247-4L / TOLL
    • Voltage(V): 650
    • RDS(ON), TYP: 30

  • Features:

    • High Blocking Voltage With Low On-Resistance
    • High-Speed Switching With Low Capacitances
    • Fast Intrinsic Diode With Low Reverse Recovery(Qrr)
    • Halogen Free, RoHS Compliant
    • Easy to Control Gate Switching
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