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[SYSD065N030THF] 650V 80A SiC MOSFET, 30mΩ ultra‑low RDS(on), for solar inverters & SMPS
[SYSD080N120T44] 1200V 36A SiC MOSFET, 80mΩ low RDS(on), fast switching, RoHS, for solar & SMPS[SYSD120N015A] 1200V 112A SiC MOSFET, ultra‑low 15mΩ RDS(on), for solar/UPS/EV charging[SYSD040120-J] 1200V 40mΩ SiC MOSFET, 70A, fast switching, low Qrr, RoHS, for solar/EV converters[SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters[SYSD120N040BH] 1200V 40mΩ SiC MOSFET, AEC-Q101, fast switching, for automotive power convertersInternal Section View of SiC MOS
SHYSEMI has its own R&D engineers and production lines. Its SiC MOSFETs can replace Infineon SiC MOSFETs and Onsemi SiC MOSFETs. It is a trustworthy semiconductor chip manufacturer. Welcome to visit our factory!
Planar SiC MOSFET
Planar silicon carbide MOSFETs, with their mature process technology, high reliability and long-term stability, high yield, and strong drive compatibility, have outstanding advantages in long-term service in high-voltage, high-power industrial and new energy applications.
Trench SiC MOSFET
Trench silicon carbide MOSFETs, with their lower on-resistance, lower switching losses, better high-frequency performance, and higher power density, have significant performance advantages in high-frequency, high-efficiency, and low-to-medium power supply scenarios.
