Applications of Silicon Carbide (SiC) Power Devices in Aerospace Electronics

Contents

1.Introduction

2.Suitability of SiC Power Devices for Aerospace Electronics

3. Application Scenarios in Aerospace Electronics

4. Conclusion

Keywords: silicon carbide (SiC) power devices, aerospace electronics, satellite, spacecraft, diode, rectification, freewheeling, brushless DC motor, electro-servo actuator, radar transmitter, hybrid electric vehicle (HEV), electric vehicle (EV)

1. Introduction

As global warming intensifies, the pursuit of a “low-carbon economy” has become a shared mission across industries—from renewable energy and smart grids to aerospace engineering.
At the core of this transition lies energy efficiency. Statistics show that 60–70% of global electricity consumption occurs in systems with low energy utilization efficiency, primarily due to losses in power conversion and motor drive stages.
In these processes, power semiconductor devices play a decisive role in determining conversion efficiency and thermal management. Consequently, improving the efficiency and reliability of power devices has become a global priority.

2. Suitability of SiC Power Devices for Aerospace Electronics

In aerospace applications, power density, size, weight, and reliability are critical performance metrics.
SiC power devices excel in this regard, offering wide bandgap characteristics, high breakdown voltage, low on-resistance, fast switching speed, and radiation resistance.

Compared with traditional silicon (Si) devices, SiC-based components can reduce power losses by up to 50%, enabling more compact and efficient power systems such as switch-mode power supplies (SMPS) and motor drivers.
Their ability to operate at elevated temperatures further reduces cooling requirements, minimizing system volume and mass—essential benefits in satellite and missile platforms.

While SiC devices have only recently entered commercial markets, their successful adoption in hybrid and electric vehicles demonstrates proven performance and maturity, underscoring their strong potential in aerospace applications where reliability and efficiency are paramount.

3. Application Scenarios in Aerospace Electronics

Based on aerospace and defense system requirements, SHYSEMI has identified several core areas where SiC power devices can deliver transformative performance improvements.

3.1 Switching Power Supplies for Missiles, Rockets, and Spacecraft Solar Systems

In aerospace power systems, diodes are typically employed for rectification and freewheeling functions.
Conventional silicon rectifiers suffer from extended reverse recovery time, resulting in increased switching losses and heat generation.
Although silicon Schottky diodes can mitigate reverse recovery losses, their breakdown voltage is limited (typically <200 V), restricting their use in high-voltage systems.

By contrast, SiC Schottky diodes offer breakdown voltages up to 1200 V and virtually zero reverse recovery current.
This not only minimizes switching losses but also simplifies the circuit protection design in switching converters.

3.2 BLDC Motor and Electro-Servo Actuator Drivers for Missiles and Rockets

The demand for higher power in brushless DC (BLDC) motors and electro-servo actuators continues to rise.
Given the limited onboard power supply, achieving higher output power requires increased current, which in turn causes excessive power dissipation, heat, and mass in the driver circuits—factors that directly impact range and payload efficiency.

SiC Schottky diodes, with their zero reverse recovery charge and high-temperature resilience, substantially improve motor driver performance.
They enable smaller, lighter, and more efficient designs while enhancing system robustness.

As SiC MOSFET fabrication technology matures, these devices are expected to replace conventional Si-based power switches, offering further reductions in system size, weight, and thermal load.

3.3 SiC MOSFETs in Satellite and Airborne Radar Transmitters

SiC MOSFETs are widely used in microwave and RF power amplification applications.
Their adoption in radar transmitters provides significant performance advantages, including:

These characteristics make SiC MOSFETs particularly well-suited for spaceborne and airborne radar systems, where environmental resilience and signal integrity are mission-critical.

4. Conclusion

Compared with traditional silicon-based solutions, SiC power devices provide superior performance in terms of efficiency, thermal management, reliability, and radiation resistance.
Although commercialization is still expanding, rapid technological advancement and global emphasis on low-carbon, high-efficiency systems are accelerating the adoption of SiC technology.

In aerospace electronics—where every gram of weight, every watt of power, and every degree of temperature matters—the use of SiC power devices marks a transformative step toward lighter, more efficient, and more durable electronic systems.
Their continued development will play a pivotal role in shaping the future of advanced space and defense technologies.