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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • New Energy Vehicle
    • Home Appliance
    • Energy Storage
    • Industrial Equipment
    • Data Centers
  • Technology
  • Our Teams
  • Blog
  • Contact Us
  • …  
    • Home
    • Products 
      • IPM
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • New Energy Vehicle
      • Home Appliance
      • Energy Storage
      • Industrial Equipment
      • Data Centers
    • Technology
    • Our Teams
    • Blog
    • Contact Us
Sample Request
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Enhancing High-Voltage Power Systems with SHYSEMI's IGBT Wafer Technology

What functions does SHYSEMI's IGBT thin film technology have?

In the core areas of energy conversion and industrial control, the performance of IGBTs directly determines the efficiency, power density and reliability of the system. SHYSEMI, as an innovative enterprise focusing on power semiconductor chip design, is becoming an important force in the domestic high-end power semiconductor market with its independently designed leading IGBT wafer products, its excellent technical strength, reliable quality assurance and open cooperation attitude.

Table of Contents

Core Technology

Top Manufacturing Empowerment

Better Performance

Breakthrough Size Design

Publicly Available Test Data

1.Core technology independence, defining industry high-performance standards

The core competitiveness of SHYSEMI comes from its completely independent IGBT chip design capabilities. We were the first to adopt and maturely master the 6th generation Trench Field Stop (TFS) technology in China. This leading technology ensures that our IGBT chips achieve the best balance between conduction loss, switching loss, and voltage withstand capability.

the 6th generation Trench Field Stop (TFS) technology in China

Complete product series: The company has successfully developed a comprehensive range of IGBT and supporting FRD chips covering 1200 V (75 A to 300 A), which can meet the market needs of most industrial drives, frequency conversion home appliances, etc.

Leading high-voltage technology: What is particularly outstanding is that the technical level of our 1700 V (100 A to 200 A) series IGBT chips has reached a leading position in the country. This provides localized top-level solutions for high-voltage applications such as photovoltaic inverters, new energy vehicle charging, and high-power industrial power supplies.

2.Top manufacturing empowerment and strong guarantee of consistent quality

Chip design is the soul, and wafer manufacturing is the solid body that realizes the soul. SHYSEMI has chosen to enter into strategic cooperation with Huahong Group, the domestic leader in wafer manufacturing. Taping out at Huahong's world-class Fab means that each of our wafers inherits its excellent process control, stable production capacity and consistent product quality, providing the strongest guarantee for the long-term reliability of our customers' products from the source.

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3.The performance exceeds that of competing products, and the VCE(sat)coefficient is significantly optimized.

Performance parameters are the touchstone for testing chip quality. Compared with similar domestic products currently on the market, SHYSEMI’s IGBT wafers have a lower saturation voltage drop (VCE(sat)) coefficient. This advantage translates directly into:

  • Lower conduction loss: the system works more efficiently and consumes less energy.
  • Smaller heat dissipation: Helps simplify heat dissipation design, improve system power density or extend life.
  • Overall system cost optimization: bringing more competitive end products to customers.

4.Unique design advantages create direct value for customers

In addition to superior performance, our products are designed with forward thinking and customer care in mind.

Breakthrough size design: Our 1700 V IGBT wafer can be the same size as the 1200 V wafer. This breakthrough means that customers do not need to change the original module packaging design or PCB layout when upgrading the system (such as upgrading from a 1200 V platform to a 1700 V platform), which greatly simplifies the product iteration process and saves development time and costs.

1700 V IGBT wafer can be the same size as the 1200 V wafer.
1700 V IGBT wafer can be the same size as the 1200 V wafer.

5.Open cooperation model to grow together with customers

SHYSEMI firmly believes that in-depth cooperation with customers is the cornerstone of win-win results. We offer much more than wafer products:

  • Technical support and joint development: We can provide technical support for packaging and testing, and are happy to work with customers to develop customized chip products to meet the unique needs of specific applications.
  • Transparent data and worry-free verification: We can provide CP test data when the wafer leaves the factory. These key data will greatly facilitate customers subsequent product reliability project verification and accelerate the launch of customer products.
  • High cost performance and brand commitment: While pursuing the ultimate in technology, we are committed to increasing market share through competitive pricing strategies, promoting our own brands, and allowing customers to obtain top performance experience at a better cost.

6.Summary

SHYSEMI is redefining localization standards for high-end IGBT wafers with its self-designed sixth-generation technology, top-tier Fab manufacturing quality, superior performance parameters, innovative design concepts, and open partner ecosystem. We sincerely invite partners from all industries to have in-depth exchanges and let our advanced IGBT wafer technology become the most powerful "core" of your next-generation high-performance power systems.


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