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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
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    • IGBT Modules
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    • IGBT Chips
    • SiC
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      • IGBT Discretes
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      • Bridge Rectifier
    • Application 
      • New Energy Vehicle
      • Home Appliance
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      • Industrial Equipment
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    • Technology
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Sample Request
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

SHYSEMI SYIM756C-SFT (SIP35) IPM vs. Leading Competitors — A Comprehensive Comparison

SHYSEMI SYIM756C-SFT (SIP35) IPM vs. Leading Competitors — A Comprehensive Comparison

Contents

1. Product Overview
2. Competitive Advantages
3. Comprehensive Reliability Verification
4. Proprietary Technology Integration


Keywords: IPM, SIP35 Package, Three-Phase Full-Bridge, PFC, Inverter, IGBT, FRD, SiC-SBD, Trench FS IGBT, Inter-Turn Short-Circuit Test, Bootstrap Circuit

1. Product Overview

The SHYSEMI's Intelligent Power Module (IPM) is a highly integrated three-phase inverter and Power Factor Correction (PFC) power system designed to simplify control circuitry, reduce PCB footprint, streamline assembly processes, and enhance overall reliability while lowering total system cost.

It is ideally suited for industrial and consumer applications requiring motor drive and power factor correction functionality.

The SIP35 package design offers excellent thermal conductivity, electrical insulation, and creepage distance safety, along with optimized EMI performance and built-in protection features including overcurrent, overtemperature, and undervoltage safeguards.

The inverter section employs low-loss IGBTs and FRDs, optimized for 5–20 kHz carrier frequencies, while the PFC stage adopts a SiC Schottky Barrier Diode (SiC-SBD) to achieve superior conversion efficiency and system reliability under switching frequencies up to 100 kHz.

Main IPM Models in SIP35 Package:

  • SYIM756C-SFT
  • SYIM756C-SST
  • SYIM756C-SAAT
  • SYIM776C-SST
  • SYIM776C-SAAT

This time, we will conduct the comparison using the model SYIM756C-SFT.

SHYSEMI's sip35 packaging product

2. Competitive Advantages

(1) Superior Core Technologies

The SYIM756C-SFT demonstrates full-stack innovation across chip design, substrate architecture, and packaging technology:

Driver IC:
Utilizes SHYSEMI’s proprietary 7-channel HVIC, offering stronger noise immunity than the 6-channel designs used by Japanese “M” and domestic “S” manufacturers.

Utilizes SHYSEMI’s proprietary 7-channel HVIC, offering stronger noise immunity than the 6-channel designs used by Japanese “M” and domestic “S” manufacturers.

FRD:
Employs a custom-designed Fast Recovery Diode with enhanced softness characteristics, ensuring stable operation in high-frequency switching environments.

IMS Substrate:
Features a low thermal resistance of 3 W/K and dielectric strength up to AC 6,000 V. The aluminum layer uses double-sided anodic oxidation, improving both thermal dissipation and insulation reliability.

Features a low thermal resistance of 3 W/K and dielectric strength up to AC 6,000 V. The aluminum layer uses double-sided anodic oxidation, improving both thermal dissipation and insulation reliability.

(2) Outstanding Electrical Performance

In both the PFC and inverter sections, the SYIM756C-SFT exhibits superior electrical characteristics across key performance metrics:

PFC Stage:
Integrates dedicated PFC drive and protection circuitry, a feature not incorporated in competitive solutions from Japanese “M” and domestic “S” manufacturers.

Inverter Stage:
Exhibits a collector–emitter saturation voltage (VCE(sat)) of 1.6 V, lower than competitors’ 1.7 V.
Turn-off time (tOFF) measures 380 ns, outperforming the 350 ns (M company) and 450 ns (S company) benchmarks.

Power Loss Comparison:
Across the entire operating frequency range (20 Hz– 90 Hz), the SYIM756C-SFT consistently demonstrates lower total module power dissipation, with a particularly strong advantage in low-frequency operation.

3. Comprehensive Reliability Verification

The SYIM756C-SFT has successfully passed a full range of rigorous environmental and endurance reliability tests:

Environmental Durability Tests:
Including electrostatic discharge (ESD), high-temperature/high-humidity storage, thermal cycling, and salt spray tests — all passed in a single qualification run.

System-Level Validation:
In the complete system and motor integration test, this module of SHYSEMI successfully passed all the evaluations, including:

  • 11 inverter performance
  • 11 EMC
  • 3 long-term operation

Notably, in the “3 electric control” assessments, SYIM756C-SFT passed the inter-turn short-circuit test, while the domestic “S” company’s clone product failed under identical conditions.

4. High Degree of Proprietary Integration

The SYIM756C-SFT incorporates a suite of in-house developed design and packaging innovations:

  • Integrated bootstrap circuit
  • PFC driver
  • Protection circuits
  • Anti-interference grounding architecture

IMS substrate employs anti-delamination technology and high-TG molding compounds, ensuring stable operation under high-temperature and high-humidity environments;

Reinforced screw-hole package design prevents cracking — a common issue observed in competing products — further enhancing mechanical robustness.

5. Conclusion

With its fully independent technology platform, outstanding electrical performance, proven reliability, and high system integration, SHYSEMI’s SYIM756C-SFT IPM clearly outperforms both domestic and international competitorsm.

It represents a new benchmark in intelligent power module innovation, providing customers with more reliable, lower-power, and cost-effective solutions for next-generation motor drive and PFC applications.

As the original manufacturer, we have a significant price advantage. Please contact us directly if you are interested. As the original manufacturer, we have a significant price advantage. Please contact us directly if you are interested.

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