• IPM

    SIP-35 Package

    The SIP-35 package is specifically engineered for high-power, high-density, and high-reliability applications.
    SHYSEMI has optimized its internal structure to achieve ultra-low parasitic inductance and on-resistance (RDS(on)), which are critical for high-frequency switching applications such as switch-mode power supplies (SMPS) and inverters.
    These optimizations significantly reduce switching losses and voltage overshoot, enhancing overall system efficiency and reliability.

    SYIM756C-SFT

    • Package：SIP-35
    • Voltage(V): 600
    • Current(A): 15
    • Strength: 3Φ
    • PFC: 40A 600V
    • Details: Up to 60 kHz, with NTC

    SYIM756C-SST

    • Package：SIP-35
    • Voltage(V): 600
    • Current(A): 15
    • Strength: 3Φ
    • PFC: 40A 600V
    • Details: Up to 100 kHz, with NTC

    SYIM756C-SAAT

    • Package：SIP-35
    • Voltage(V): 600
    • Current(A): 15
    • Strength: 3Φ
    • PFC: 40A 600V
    • Details: Up to 100 kHz, with NTC

    SYIM776C-SST

    • Package：SIP-35
    • Voltage(V): 600
    • Current(A): 20
    • Strength: 3Φ
    • PFC: 40A 600V
    • Details: Up to 100 kHz, with TDF

    SYIM776C-SAAT

    • Package：SIP-35
    • Voltage(V): 600
    • Current(A): 20
    • Strength: 3Φ
    • PFC: 40A 600V
    • Details: Up to 100 kHz, with NTC

  • Applications:

    The SIP-35 package typically features a single-screw mounting design, enabling easy installation and uniform pressure distribution. This ensures excellent thermal contact between the package and the heatsink, improving heat dissipation and long-term operational stability. The SIP-35 package delivers an optimized solution for applications demanding maximum efficiency, power density, and reliability.

    • Air cond
    • Converter

  • Features:

    • Fully Insulated Single In-line Power Module
    • Using IMS Insulated and Heat-dissipating Substrate
    • SIP (single in line) Fully Insulated Package Structure is Adopted
    • Three-phase Full Bridge: 15 A & 20 A 600 V, PFC: 40 A 600 V
    • Active High, Compatible With TTL / CMOS level
    • Integrated Bootstrap Functionality
    • Independent Inverter and PFC Over-current Shutdown
    • Under-voltage Lockout at all Channels
    • Cross-conduction Prevention
    • Fault Signal Output
    • Independent Low Side IGBT Emitter
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