Jack once worked at Huahong Group. With his profound expertise in wafer and IGBT module design, he led our research and development efforts.The team he led was dedicated to enhancing the heat dissipation performance, conversion efficiency and durability of electric vehicles, solar inverters and industrial motor drives.
Foreword: The Material Revolution in Power Semiconductors
Driven by global carbon neutrality initiatives, power electronics systems are accelerating toward higher efficiency, greater power density, and improved reliability. As the "heart" of any inverter-driven system, the Intelligent Power Module (IPM) directly determines the overall energy efficiency and service life of the end product.
After decades of refinement, conventional silicon-based IGBT IPMs are approaching the physical limits of the material itself. Silicon carbide (SiC) — the flagship of third-generation wide bandgap semiconductors — is now driving a profound technological shift. SHYSEMI is the first to deliver on a breakthrough promise: material upgrade, price unchanged. By bringing hybrid SiC technology across its entire IPM product line, the company enables customers to capture the performance gains of third-generation semiconductors at zero additional cost.
1. What Is a SiC IPM? The Essence of the Material Upgrade
1.1 IPM: Core Value of the Intelligent Power Module
An Intelligent Power Module (IPM) is a highly integrated solution that combines power switching dies, gate driver ICs, and protection circuitry in a single package. Compared with discrete device approaches, IPMs deliver:
- Higher integration density — PCB footprint reduced by more than 40%
- Built-in overcurrent, over-temperature, and undervoltage protection — significantly improved reliability
- Simplified R&D and design cycle — shorter time to market
- Optimized parameter matching — superior electromagnetic compatibility (EMC)
Figure 1: Layered internal structure diagram of the SHYSEMI IPM
1.2 Silicon Carbide: Breaking Through Silicon's Physical Limits
Compared with conventional silicon (Si), silicon carbide (SiC) offers four game-changing physical advantages:
These physical properties translate directly into real-world benefits:
- Switching losses reduced by over 80% — no IGBT tail current
- Operating temperature up to 175°C — dramatically improved thermal stability
- Switching frequency increased 3–5× — significant reduction in passive component size
- Positive temperature coefficient of on-resistance — easy paralleling with excellent current sharing
Figure 2: Key performance comparison between silicon carbide (SiC) and silicon (Si)
2. SHYSEMI SiC IPM: Five Core Technical Breakthroughs
SHYSEMI employs a hybrid SiC architecture, deploying SiC MOSFETs at critical switching positions while optimizing the freewheeling path — achieving the optimal balance between performance and cost.
2.1 Energy Efficiency Leap: 55% Lower Losses, 3–5% Higher Efficiency
Compared with equivalent conventional silicon-based IPMs, SHYSEMI SiC IPMs deliver:
- Total power loss reduced by 55% — switching losses alone drop by 86%
- System efficiency improved by 3–5 percentage points — inverter air conditioner APF increased by more than 0.3
- Temperature rise reduced by 20–30°C — heatsink volume can be cut by 30%
- Field-tested data: In a 1.5 HP inverter-driven air conditioner compressor drive, the SHYSEMI SiC IPM saves approximately 85 kWh annually. Over a 10-year service life, a single unit saves 850 kWh and reduces carbon emissions by roughly 600 kg.
2.2 Power Density: 51% Higher Current Output in the Same Footprint
Thanks to the low-loss characteristics of SiC devices:
- Current output capacity increased from 15A to over 22.5A within the same package size
- Module volume reduced by 40% at an equivalent power level
- Thermal resistance reduced by 25% — achieved by replacing conventional DBC with an IMS (Insulated Metal Substrate)
2.3 Higher Switching Frequency: From 15 kHz to 50 kHz
The near-zero reverse recovery losses of SiC devices support significantly higher switching frequencies:
- Motor noise substantially reduced — operating above the human ear's sensitive frequency range
- Filter volume reduced by 70% — major cost savings on inductors and capacitors
- Lower current ripple — smoother motor operation with reduced torque ripple
2.4 Reliability: 2.5× Higher MTBF
- Junction temperature operating range: −40°C to 175°C — a 25°C improvement over silicon
- Short-circuit withstand time: ≥5 μs, meeting industrial-grade reliability requirements
- Comprehensive built-in protection: four-layer protection against overcurrent, over-temperature, undervoltage, and short circuits
- Automotive-grade packaging process — AEC-Q101 reliability certified
2.5 Pin-to-Pin Compatibility: Zero-Cost Upgrade
SHYSEMI's core commitment: upgrade the technology, not the price.
- Fully compatible packaging — SIP-35, DIP-37, and other mainstream packages support direct pin-to-pin replacement
- Price unchanged — SiC performance at silicon pricing
- No software changes required — control algorithms remain fully compatible
- No hardware modifications needed — existing PCB designs can be used as-is
3. Four Key Applications OF SiC IPM
Figure 3: Four core application areas for SHYSEMI SiC IPMs
3.1
Inverter Home Appliances: The Winning Edge Under New Energy Efficiency Standards
Applications: Inverter air conditioners, refrigerators, washing machines, heat pump water heaters
Customer Value:
- Easily meets the new Tier-1 energy efficiency standard — APF improved by 0.2–0.4
- Quieter compressor operation — noise reduced by 3–5 dB
- Significantly improved low-temperature startup performance at −35°C for outdoor units
- Smaller heatsinks — more flexible overall mechanical design
Representative Model: SYIM756C-SAAT (600V/15A Hybrid SiC IPM with integrated PFC)
3.2 Industrial Servo Drives: The Performance Foundation for Precision Motion Control
Applications: Servo motors,
robotic joints, CNC machines, 3D printers
Customer Value:
- Motor torque ripple below 3% at high-frequency drive — positioning accuracy within ±1 pulse
- Drive volume reduced by 50% — enabling high-density cabinet installations
- Lower temperature rise over extended operation — MTBF increased from 20,000 to 50,000 hours
- Supports high-speed response requirements of EtherCAT bus systems
3.3 New Energy Vehicles: The Efficiency Revolution in OBCs and DC-DC Converters
Applications: On-board chargers (OBCs), DC-DC converters, electric A/C compressors
Customer Value:
- Charging efficiency improved from 94% to over 97%
- 6.6 kW OBC losses reduced by approximately 200W — faster charging speeds
- Operating temperature range covers automotive requirements of −40°C to 125°C
- Compliant with AEC-Q101 and ISO 26262 functional safety standards
3.4 Renewable Energy Generation: Efficiency Gains in Solar and Energy Storage
Applications: String PV inverters, energy storage PCS, microinverters
Customer Value:
- European efficiency improved from 97.5% to 98.8%
- Switching frequency increased to 100 kHz — optimal LLC resonant topology performance
- Simplified thermal design — natural convection cooling viable for models under 3 kW
- Enhanced grid compatibility — improved high- and low-voltage ride-through capability
4. The Drop-In Replacement for onsemi / Mitsubishi IPMs
For mainstream imported IPM products, SHYSEMI offers 100% compatible replacement solutions — fully upgraded with SiC technology:
Replacement Advantages:
- Supply Chain Security — Domestic production with full autonomy, 4–6 week lead times
- Technical Support — Local FAE team with 24-hour response time
- Cost Advantage — Same price point with SiC performance upgrade
- Customization — Parameters tailored to customer requirements
5. Selection Guide and Technical Support
5.1 Product Series Overview
5.2 Complimentary Technical Support Services
SHYSEMI provides end-to-end technical support for all customers:
- Complimentary DEMO evaluation boards and test reports
- Senior FAE on-site support for debugging assistance
- Complete reference designs and schematics
- Customized thermal design and simulation services
- EMC testing and optimization recommendations
Conclusion: The Energy Efficiency Revolution Starts Here
The transition from silicon to silicon carbide is an irreversible trend in the power semiconductor industry. With its "upgrade without a price increase" model, SHYSEMI is breaking the industry assumption that high performance demands a premium — enabling customers to harness the benefits of third-generation semiconductors without spending more.
Choosing a SHYSEMI SiC IPM means gaining more than just a chip. You get:
- A comprehensive leap in product competitiveness — industry-leading efficiency metrics
- A solid guarantee of supply chain security — domestic production with stable supply
- A zero-risk technology upgrade path — pin-to-pin compatibility for a seamless transition
- A future-ready technology platform — performance headroom for next-generation products
Contact us today and step into the new era of IPM technology.
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