
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
New Energy Vehicle
Power semiconductors play a vital role in the electrification and digitalization of vehicles. From traction inverters to on-board chargers, SHYSEMI's SiC and IGBT solutions enable high efficiency, compact size, and outstanding reliability for next-generation electric vehicles.
Delivering up to 1200 V / 300 A performance with industry-leading switching efficiency for high-voltage traction systems.
New Energy Vehicle Solutions
SHYSEMI has over a decade of experience in the automotive sector. All products are certified to stringent automotive-grade AEC-Q standards, ensuring high reliability and long-term performance.
SHYSEMI Automotive-Grade SiC Module Advantages
SHYSEMI’s automotive-grade SiC modules are offered in five package types, providing a comprehensive portfolio with broad voltage and current ranges to meet the diverse requirements of automotive applications.
8 Major Advantages
- Mass-adopted by leading domestic new energy enterprises.
- Significantly improves system efficiency, reducing thermal losses by over 30% and system footprint by up to 60%.
- Achieves power conversion efficiency of 95% or higher.
- Built with automotive-grade packaging that meets stringent industry standards.
- Features a wide bandgap more than 3 times that of silicon, with a critical breakdown field 7–10 times higher.
- Enables higher blocking voltage and lower on-state voltage drop.
- Delivers faster switching speeds with reduced switching losses.
- Supports higher operating temperatures and enhanced thermal reliability.
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