
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
New Energy Vehicle Solutions —
SiC & IGBT for Vehicle Electrification
SHYSEMI offers SiC application solutions for new energy vehicles. Its automotive power devices are suitable for electronic control units (ECUs), drive systems, OBCs, and DC-DC converters; technical support and sample testing are available.
New Energy Vehicle Applications
SHYSEMI has over a decade of experience in the automotive sector. All products are certified to stringent automotive-grade AEC-Q standards, ensuring high reliability and long-term performance.
SHYSEMI Automotive-Grade SiC Module Advantages
SHYSEMI’s automotive-grade SiC modules are offered in five package types, providing a comprehensive portfolio with broad voltage and current ranges to meet the diverse requirements of automotive applications.
8 Major Advantages of
Automotive-Grade SiC Module
- Mass-adopted by leading domestic new energy enterprises.
- Significantly improves system efficiency, reducing thermal losses by over 30% and system footprint by up to 60%.
- Achieves power conversion efficiency of 95% or higher.
- Built with automotive-grade packaging that meets stringent industry standards.
- Features a wide bandgap more than 3 times that of silicon, with a critical breakdown field 7–10 times higher.
- Enables higher blocking voltage and lower on-state voltage drop.
- Delivers faster switching speeds with reduced switching losses.
- Supports higher operating temperatures and enhanced thermal reliability.
Quotation or specification sheet? Contact us!
SHYSEMI is a professional semiconductor product manufacturer, and our factories and engineers will do their best to meet your needs.
Copyright © 2026 SHYSEMI All Rights Reserved









