Independent Technology of IPM
The IPM products of SHYSEMI have the following four advantages: advanced technology IGBT, integrated multiple functions Drive IC, high insulation IMS substrate, and high-quality packaging materials.
IGBT
- Design of grooved strip grating
- Field board and lateral variable doping terminal
- Field cutoff technology
- Design switch speed matching for inverter and PFC PWM frequencies separately
Drive IC
- Integrated bootstrap circuit
- Integrated PFC driver circuit
- Integrated PFC protection circuit
- Detection port anti-interference design
- Good match with independently developed IGBT
IMS Substrate
- High thermal resistance, high TC passivation layer material
- Anodic oxidation process
- Low EMl busbar design
- Design of anti-interferencegrounding wire
- Anti layering technology
EMC
- Various shapes and particle sizes of Al2O3 filling
- High TG plastic sealing material
- Matching of Linear Thermal
- Expansion Coefficient with Substrateand Chip Materials
- Techniques for increasing fluidityand reducing viscosity
SYIM756-SFT: SHYSEMI's Flagship IPM Solution
Taking our IPM product, SYIM756-SFT, as an example, this product not only boasts advanced technology IGBTs, integrated multi-function drive ICs, high-insulation IMS substrates, and high-quality packaging materials, but it is also one of our most popular products.
- Proprietary 7-channel HVIC with enhanced noise immunity.
- Independent Trench FS IGBT for inverter/PFC PWM applications.
- IMS substrate withstands >6000V insulation voltage.
- Japanese low-CTE package: 1.7W/m·K thermal conductivity, Tg ≥180°C.
