
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
4 Key Advantages of SHYSEMI IPM
SHYSEMI adopts the latest IPM technology and continues to invest in R&D for continuous product iteration. Compared with mainstream IPM products on the market, SHYSEMI features four core technical advantages.
Independent Technology of IPM
The IPM products of SHYSEMI have the following four advantages: advanced technology IGBT, integrated multiple functions Drive IC, high insulation IMS substrate, and high-quality packaging materials.

IGBT
- Design of grooved strip grating
- Field board and lateral variable doping terminal
- Field cutoff technology
- Design switch speed matching for inverter and PFC PWM frequencies separately

Drive IC
- Integrated bootstrap circuit
- Integrated PFC driver circuit
- Integrated PFC protection circuit
- Detection port anti-interference design
- Good match with independently developed IGBT

IMS Substrate
- High thermal resistance, high TC passivation layer material
- Anodic oxidation process
- Low EMl busbar design
- Design of anti-interferencegrounding wire
- Anti layering technology

EMC
- Various shapes and particle sizes of Al2O3 filling
- High TG plastic sealing material
- Matching of Linear Thermal
- Expansion Coefficient with Substrateand Chip Materials
- Techniques for increasing fluidityand reducing viscosity

Inside the SIP35 IPM Wire Bonding Process
Experience the pinnacle of micro-manufacturing. This high-definition video captures the ultra-precise, point-to-point wire bonding process of our SIP35 encapsulated Intelligent Power Module (IPM) in stunning clarity.
- Sign up foSub-Micron Precision: The video demonstrates the flawless point-to-point interconnects, ensuring minimal electrical resistance and maximum signal integrity for the self-developed 7-channel gate driver IC.
- Heavy-Duty Reliability: Every wire bond is optimized to handle high current paths between the PFC and 3-Phase Inverter circuits, ensuring the module withstands rigorous thermal and mechanical stress.
- Advanced IMS Substrate Integration: The bonding is perfectly tailored to our IMS (Insulated Metal Substrate), achieving an optimal balance between robust electrical connection and superior heat dissipation.
- Zero-Defect Quality Control: Each loop, height, and pull-strength is monitored in real-time by automated optical inspection (AOI) to ensure the ultimate reliability of the built-in FLT protection and NTC thermistor systems.r a creative consultation
SHYSEMI vs. Infineon
After we compared the test data of SHYSEMI's chips with that of Infineon, we found that many of the data were on par with the top brands in this industry. Therefore, SHYSEMI's chips will be an excellent alternative product.
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SHYSEMI is striving to become a world-leading semiconductor supplier.






