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- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
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- Bridge Rectifier
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- Energy Vehicle
- Home Appliance
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- About Us
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- About Us
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- About Us
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- About Us
Proven Reliability of Our IPM Devices
Quality Excellence in Power Semiconductors | SHYSEMI
At SHYSEMI, quality is our core. We implement rigorous quality control across our entire supply chain—from raw material sourcing to advanced manufacturing. Equipped with state-of-the-art packaging lines and testing facilities for electronic components and power devices, we are ISO9001 and IATF 16949 certified. Our premium product range is fully AEC-Q qualified, ensuring superior consistency and reliability for automotive and industrial applications.
Comprehensive Reliability Testing & Qualification Data
Our products are validated through industry-standard testing, including HTGB, HTRB, power cycling, and thermal performance evaluation, ensuring long-term stability and performance in demanding applications.
Test Item: Highly Accelerated Stress Test (HAST)
Experimental Conditions: Ta = 130 ± 2 °C, 85 % ± 5% RH,230 kPa (Relative Pressure), Vce=42V, 96h
Testing Manufacturer: HIRAYAMA株式会社 (Japan)
Executive Standard: JESD22-A110
Test Item: Unbiased Highly Accelerated Stress Test (UHAST)
Experimental Conditions: Ta = 130 ± 2 ℃, 85 % ± 5 % RH, 230 kPa (Relative Pressure), 96h
Testing Manufacturer: HIRAYAMA株式会社 (Japan)
Executive Standard: JESD22-A118
Test Item: Thermal Shock Test (TST)
Experimental Conditions: -40 ℃ (15min) ~ +125 ℃ (15min), 500 cycles
Testing Manufacturer: Vötschtechnik (Germany)
Executive Standard: JESD22-A106
Test Item: Power Cycling Test (PC)
Experimental Conditions: -40 ℃ (15min) ~ +125 ℃ (15min), 500 cycles
Testing Manufacturer: Vötschtechnik (Germany)
Executive Standard: JESD22-A106
Test Item: Temperature Cycling Test (TCT)
Experimental Conditions: 25 °C ~ −40 °C (cooling, 4.5 min) ~ −40 °C (dwell, 15 min) ~ 25 °C (heating, 4.5 min) ~ 25 °C (dwell, 5 min) ~ 125 °C (heating, 7 min) ~ 125 °C (dwell, 15 min) ~ 25 °C (cooling, 7 min) ~ 25 °C (dwell, 5 min) 500 cycles
Testing Manufacturer: Vötschtechnik (Germany)
Executive Standard: JESD22-A104
Test Item: High Temperature Reverse Bias Test (HTRB)
Experimental Conditions: Ta=125; VCE=480V; 1000Hrs
Testing Manufacturer: Hangzhou Zhong'an Electronics Co., Ltd.
Executive Standard: JESD22-A108
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SHYSEMI is striving to become a world-leading semiconductor supplier.

