SiC Module

TPAK SiC modules provide four major architectural and performance benefits over conventional HP1 integrated three-phase bridge modules:

1. Flexible Topologies & Single-Phase Scalability: TPAK supports independent replacement of individual half-bridge or single-phase legs, significantly lowering maintenance and field-repair costs. In contrast, since the HP1 integrates a full three-phase bridge into a single housing, a single die failure mandates the replacement of the entire module.
2. Ultra-Low Parasitic Inductance: When paired with Shenhuaying Semiconductor’s optimized TPAK SiC dies, stray inductance is drastically minimized. This reduces switching losses and translates to a 5% to 8% extension in overall EV driving range.
3. Multi-Platform Compatibility: TPAK provides a flexible footprint that enables hardware reuse across different power classes. The exact same electronic control unit (ECU) hardware platform can seamlessly accommodate both Silicon IGBTs and SiC MOSFETs.
4. Compact Form Factor: The space-saving design is highly optimized for integrated dual-inverter layouts, delivering a power density boost of over 30%.

Yes. Advanced thermal simulations demonstrate that under this operational profile using a single-row design, the steady-state die junction temperature (Tj) stabilizes at approximately 132°C. This remains safely below the automotive-grade limit of 150°C.

When paired with a well-optimized liquid cooling system, the module is fully capable of sustained 260Arms continuous output while leaving ample safety margin for transient peak currents. This performance profile is ideally matched to mainstream 400V passenger vehicle electric drivetrains.

SHYSEMI’s TPAK SiC series is highly versatile and fully optimized for several high-voltage automotive subsystems, including:

• High-voltage On-Board Chargers (OBCs)
• High-power bidirectional DC-DC boost converters
• Auxiliary drive inverters for commercial vehicles

Additionally, our 1200V voltage-rated variants are perfectly tailored for emerging 800V high-voltage fast-charging architectures, enabling automotive OEMs to achieve cross-platform component standardization across multiple vehicle segments.

Yes, they can be made hardware-compatible. In terms of current-carrying capacity, thermal dissipation performance, and minimized parasitic parameters, TPAK modules are fundamentally superior to discrete TO-247 packages.

For legacy inverter designs that rely on multiple parallel TO-247 discrete devices, migrating to a unified TPAK SiC module reduces the overall parallel device count. This streamlines the system architecture, simplifies PCB layout, and optimizes the bill of materials (BOM) cost.