SHYSEMI's SiC modules are primarily used in new energy vehicles and photovoltaic energy storage systems. Our technology in the electric vehicle sector is well-established, with long-term partnerships in place with leading manufacturers such as Volkswagen, GAC, and BAIC.
In photovoltaic energy storage applications, the modules also deliver substantial gains in energy efficiency.SHYSEMI's silicon carbide power devices feature a breakdown voltage of up to 200 kV and an operating temperature of up to 600°C. Thanks to their very low on-state resistance and suitability for high-voltage, high-temperature, and high-frequency environments, these SiC-based power switches can reduce switching-related power losses by more than 80% compared to traditional silicon-based devices, while also reducing volume and weight by approximately 40%. These advantages are poised to significantly influence future grid infrastructure and energy strategy adjustments.
[SYSM120N200A] 1200V 200A SiC MOSFET module, 15mΩ low RDS(on), fast switching for DC/DC & SMPS
[SYSM480HF12DCM] 1200V 480A SiC MOSFET module, 2.2mΩ ultra‑low RDS(on), low inductance for EV drives
[SYSM3F02R12HPD] 1200V 400A SiC MOS module, 2.55mΩ ultra‑low RDS(on), low inductance for motors EV
[SYSMSC50FF120T5H] 1200V 87A SiC MOS module, 25mΩ low RDS(on), zero reverse recovery for solar & UPS
[SYSM008S120TPKG1] 1200V 230A SiC MOSFET, 8.9mΩ ultra‑low RDS(on), high‑speed for EV inverters
