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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
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    • Home
    • Products 
      • IPM
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • Energy Vehicle
      • Home Appliance
      • Renewable Energy
      • Industrial Equipment
      • Data Centers
    • Technology
    • Our Teams
    • Blog
    • Contact Us
Sample Request
WhatsApp: https://wa.me/8615361554542
mailto:info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
Less Energy
More Efficiency
  • Home
  • Products 
    • IPM
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
  • Technology
  • Our Teams
  • Blog
  • Contact Us
  • …  
    • Home
    • Products 
      • IPM
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • Energy Vehicle
      • Home Appliance
      • Renewable Energy
      • Industrial Equipment
      • Data Centers
    • Technology
    • Our Teams
    • Blog
    • Contact Us
Sample Request
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
  • IGBT Modules

    Mid/High Power F Series

    Some Applications
  • Why Choose SHYSEMI’s Mid/High Power F Series IGBT Modules?

    The medium and high-power F series modules of SHYSEMI are available in two sizes: 34mm and 62mm packages, it not only demonstrate the manufacturer's design capabilities but also require high-quality raw materials. The IGBT modules' low conduction losses, high switching frequencies, and excellent heat dissipation ensure stable operation even in harsh environments.

    As SHYSEMI's flagship product line, the 62 mm series represents leading quality in China, with test data comparable to that of top German and Japanese products.

  • Package List

    Section image

    34mm

    SHYSEMI’s 32mm IGBT products are built with self-developed chips and offer high functional compatibility, strong integration, and reliable insulation, with customizable solutions available to meet specific application needs.

    Details
    Section image

    62mm

    As SHYSEMI's flagship product line, the 62 mm series represents leading quality in China, with test data comparable to that of top German and Japanese products.

    Details
  • 34mm Applications:

    The 34mm IGBT module standard was primarily established by industry leaders such as Infineon, Fuji Electric, and Mitsubishi. SHYSEMI has now made significant breakthroughs in this technology. By employing the latest micro-pattern trench field-stop chip technology, the company produces thinner chips that substantially reduce both turn-on and turn-off losses (Eon/Eoff). Furthermore, through the use of high-performance thermal grease or even sintered connections to attach the chip directly to the substrate, thermal resistance is greatly minimized.

    • Welding Machine、Cutting Machine
    • Plating Power Supply、Induction Heating
    • SMPS、UPS

  • SYIM15S60

    • Package:34mm
    • Voltage(V): 650
    • Current(A): 75
    • VCE(SAT)@typ.Tj=25°C: 5
    • VGEth@typ.Tj=25°C: 1.9
    Specification

    SYMF75HF120T1VH

    • Package:34mm
    • Voltage(V): 1200
    • Current(A): 75
    • VCE(SAT)@typ.Tj=25°C: 5
    • VGEth@typ.Tj=25°C: 3.3
    Specification

    SYMF100HF120T1VH

    • Package:34mm
    • Voltage(V): 1200
    • Current(A): 100
    • VCE(SAT)@typ.Tj=25°C: 5
    • VGEth@typ.Tj=25°C: 3.3
    Specification

    SYMT150HF120T1VH-SF

    • Package:34mm
    • Voltage(V): 1200
    • Current(A): 150
    • VCE(SAT)@typ.Tj=25°C: 5.7
    • VGEth@typ.Tj=25°C: 1.7
    Specification
  • 34mm Features:

    • Short Circuit Rated >10μs
    • Non Punch Through (NPT) Technology
    • Low Saturation Voltage
    • Low Switching Loss
    • 100% RBSOA Tested (2×Ic)
    • Low Stray Inductance
    • Lead Free, Compliant with RoHS Requirement
    Section image
  • 62mm Applications:

    The 62mm IGBT module represents a highly mature and widely adopted standard for high-power applications. Its design integrates numerous advanced IGBT and diode chips to achieve exceptionally high current ratings. The high heat generated by these multiple chips is effectively dissipated through high-performance thermal interface materials and sintering technology. Engineered for demanding 24/7 industrial operation in harsh environments—such as mines, steel mills, and offshore wind farms—this module offers significant system-level advantages. Specifically, compared to using several smaller modules in parallel, a single 62mm module simplifies the design of the gate drive circuit, cooling system, busbar connections, and protection circuitry, thereby lowering overall system integration costs.

    • Welding
    • HEV Inverter
    • Industrial Motor Drives
    • UPS

  • SYMT100HF170T1VH

    • Package:62mm
    • Voltage(V): 1700
    • Current(A): 100
    • VCE(SAT)@typ.Tj=25°C: 6
    • VGEth@typ.Tj=25°C: 2.4
    Specification

    SYMT200HF120T2VH-M

    • Package:62mm
    • Voltage(V): 1200
    • Current(A): 200
    • VCE(SAT)@typ.Tj=25°C: 5.7
    • VGEth@typ.Tj=25°C: 1.8
    Specification

    SYMT300HF120T2VH-M

    • Package:62mm
    • Voltage(V): 1200
    • Current(A): 300
    • VCE(SAT)@typ.Tj=25°C: 5.9
    • VGEth@typ.Tj=25°C: 1.9
    Specification

    SYMT150HF170T2VH

    • Package:62mm
    • Voltage(V): 1700
    • Current(A): 150
    • VCE(SAT)@typ.Tj=25°C: 6.0
    • VGEth@typ.Tj=25°C: 2.3
    Specification

    SYMT200HF170T2VH

    • Package:62mm
    • Voltage(V): 1700
    • Current(A): 200
    • VCE(SAT)@typ.Tj=25°C: 6.0
    • VGEth@typ.Tj=25°C: 2.3
    Specification

    SYMT150CU120T2VH

    • Package:62mm
    • Voltage(V): 1200
    • Current(A): 150
    • VCE(SAT)@typ.Tj=25°C: 5.9
    • VGEth@typ.Tj=25°C: 1.7
    Specification

    SYMT200CU120T2VH

    • Package:62mm
    • Voltage(V): 1200
    • Current(A): 300
    • VCE(SAT)@typ.Tj=25°C: 6
    • VGEth@typ.Tj=25°C: 3.15
    Specification
  • 62mm Features:

    • Short Circuit Rated >10μs
    • Non Punch Through (NPT) Technology
    • Low Saturation Voltage
    • Low Switching Loss
    • 100% RBSOA Tested (2×Ic)
    • Low Stray Inductance
    • Lead Free, Compliant with RoHS Requirement
    Section image
  • For More Information or to Get a Product Quotation,

    Please Send Us an Email and We Will Contact You as Soon as Possible

    We respect the privacy of our customers and keep all customer data secure.

Products

IPM

IGBT Modules

IGBT Discretes

IGBT Chip

SiC MOS

SiC Module

FRD / MUR

FRD Chip

Bridge Rectifier

Application

New Electric Vehicle

Home Appliance

Renewable Energy Systems

Industrial Equipment

Data Centers

Technology

Our Teams

Blog

SHYSEMI is striving to become a world-leading semiconductor supplier.

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