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- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
Less Energy
More Efficiency
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
- …
- Products
- IPM Modules
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- Energy Vehicle
- Home Appliance
- Renewable Energy
- Industrial Equipment
- Data Centers
IGBT Modules
Mid/High Power F Series
Why Choose SHYSEMI’s Mid/High Power F Series IGBT Modules?
The medium and high-power F series modules of SHYSEMI are available in two sizes: 34mm and 62mm packages, it not only demonstrate the manufacturer's design capabilities but also require high-quality raw materials. The IGBT modules' low conduction losses, high switching frequencies, and excellent heat dissipation ensure stable operation even in harsh environments.
As SHYSEMI's flagship product line, the 62 mm series represents leading quality in China, with test data comparable to that of top German and Japanese products.
Package List

34mm
SHYSEMI’s 34mm IGBT products are built with self-developed chips and offer high functional compatibility, strong integration, and reliable insulation, with customizable solutions available to meet specific application needs.

62mm
As SHYSEMI's flagship product line, the 62 mm series represents leading quality in China, with test data comparable to that of top German and Japanese products.
34mm
The 34mm IGBT module standard was primarily established by industry leaders such as Infineon, Fuji Electric, and Mitsubishi. SHYSEMI has now made significant breakthroughs in this technology. By employing the latest micro-pattern trench field-stop chip technology, the company produces thinner chips that substantially reduce both turn-on and turn-off losses (Eon/Eoff). Furthermore, through the use of high-performance thermal grease or even sintered connections to attach the chip directly to the substrate, thermal resistance is greatly minimized.
Choose the Model
SYMT150HF120T1VH-SF: 1200V/150A, Field Stop Trench Gate IGBT Module with ultra-low VCE(sat)
SYMF100HF120T1VH: 1200V/100A NPT IGBT Module featuring low switching loss, low VCE(sat), and >10μs
SYMF75HF120T1VH: 1200V/75A, NPT IGBT Module with low switching loss, >10μs short-circuit capability62mm
The 62mm IGBT module represents a highly mature and widely adopted standard for high-power applications. Its design integrates numerous advanced IGBT and diode chips to achieve exceptionally high current ratings. The high heat generated by these multiple chips is effectively dissipated through high-performance thermal interface materials and sintering technology.
Engineered for demanding 24/7 industrial operation in harsh environments—such as mines, steel mills, and offshore wind farms—this module offers significant system-level advantages. Specifically, compared to using several smaller modules in parallel, a single 62mm module simplifies the design of the gate drive circuit, cooling system, busbar connections, and protection circuitry, thereby lowering overall system integration costs.
Choose the Model
SYMT200CU120T2VH: 1200V/200A IGBT module for welding, HEV and industrial drive
SYMT150CU120T2VH: 1200V/150A IGBT module for industrial power applications
SYMT200HF170T2VH: 1700V/200A IGBT module delivers low saturation voltage, short-circuit reliability
SYMT150HF170T2VH: 1700V/150A IGBT module features low saturation voltage, short-circuit capability
SYMT300HF120T2VH-M: 1200V/300A IGBT module delivers low saturation voltage, high reliability
SYMT200HF120T2VH-M: 1200V/200A high-current IGBT module delivers low saturation voltage
SYMT100HF170T1VH: 1700V/100A IGBT module features low saturation voltage, low switching lossFor More Information or to Get a Product Quotation,
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