• When direct current passes through the SiC module, the outflow direction and frequency of the current are changed by the rapid opening and closing of different switch combinations, so as to output the desired alternating current.

    The SiC material used by SHYSEMI has a large bandgap and a high electron saturation drift velocity, which allows SiC HPD modules to achieve higher power output in a smaller volume, thus reducing the size and weight of the device.

    Motor Drive

    • Inverter efficiency improved by 5% to 8%.
    • 3-in-1 car charger: OBC+DCDC+PDU.
    • All-in-1 motor controller
    • Switching frequency can reach 200-300kHz

  • Product Features

    Section image

    Features：

    • New Semiconductor Material - Silicon Carbide Low RDSon
    • Low Switching Losses
    • Low Qg and Crss
    • Low Inductive Design < 10nH
    • Tvjop=150°C
    Section image

    Features：

    • High Performance Si3N4 Ceramic
    • Direct Cooled PinFin Base Plate
    • Hight Tg EMC Transfer Molding
    • Copper Wire Bonding, Ag Sintering
    • RoHS Compliant

  • Block Diagram

    The SiC material used by SHYSEMI has high thermal conductivity and low energy loss, making the SiC HPD module more efficient in converting electrical energy and effectively reducing energy waste.

    Benefits

    SHYSEMI’s modular inverter platform supports both IGBT-based and SiC-based traction inverter systems, enabling OEMs to speed up their transition to wide-bandgap technology.

    • Powerful charging infrastructure
    • Reliable & long-lifetime chargers
    • Increased power density
    • PSOC™ Control: optimized algorithm exec.
    • Lower conduction & switching losses

  • Recommend Products: SiC MOS, SiC Module

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