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Less Energy
More Efficiency

Home
Products
IPM Modules
IGBT Modules
IGBT Discretes
IGBT Chips
SiC
FRD(MUR)
Bridge Rectifier
Application
Energy Vehicle
Home Appliance
Renewable Energy
Industrial Equipment
Data Centers
Technology
Latest IPM Technology
High Voltage (HV) Die Technolog
Reliability & Qualification
About Us
Our Company
Technical Team
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Contact Us
Blog
- Home
- Products
  IPM Modules
  IGBT Modules
  IGBT Discretes
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  SiC
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  Bridge Rectifier
- Application
  Energy Vehicle
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  Renewable Energy
  Industrial Equipment
  Data Centers
- Technology
  Latest IPM Technology
  High Voltage (HV) Die Technolog
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Free Sample

SYD25H120ADB: 1200V/25A trench IGBT, low VCE(sat), low loss, positive temp coeff for welder/UPS

SYD3N020WRH: 1350V/20A RC IGBT with low loss, soft switching, for induction cooking, converter

SYD060Q065AY1S3: 650V/60A trench IGBT, ultra‑low VCE(sat), fast switching, high‑temp resistant

SYD050Q065AY1S3: 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature

SYD40H120ADB: 1200V/40A trench IGBT, low saturation voltage, low loss, high reliability for UPS

SYD15H120ADB: 1200V/15A trench IGBT with low loss, positive temp coeff, high reliability for solar

SYD3065SLW: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

Package：TO-247 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4 Details: SYD3065SLW 650V 30A high-speed IGBT transistor offers low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, easy parallel operation, multi-packages (TO‑247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions. *For English specification, please contact us.

[SYSM3F02R12HPD] 1200V 400A SiC MOS module, 2.55mΩ ultra‑low RDS(on), low inductance for motors EV

SYD4065RH1: 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching

[MBR30200PT] 200V 30A Schottky diode, 0.83V low VF, high speed, for SMPS & freewheeling

[MBR40200PT] 200V 40A Schottky diode, 0.85V low VF, high frequency, RoHS for SMPS & freewheeling

SYD075H065CX1S3: 650V/75A trench IGBT, low VCE(sat), fast switching, 175°C for solar/UPS/welding

[MUR6030PT] 300V 60A fast recovery diode, 30ns trr, low VF, soft recovery for SMPS & inverters

SYD3065SLB: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

Package：TO-220F VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4.0 Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor offers low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, easy parallel operation, multi-packages (TO‑247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions. *For English specification, please contact us.

All Categories - Power Semiconductor Manufacturer | IPM IGBT SiC | SHYSEMI

SYD25H120ADB: 1200V/25A trench IGBT, low VCE(sat), low loss, positive temp coeff for welder/UPS

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 6 Details: SYD25H120ADB 1200V 25A field‑stop trench IGBT, 1.7V saturation voltage, low switching loss, positive temperature coefficient, 175°C, RoHS, solar inverter, welder, UPS power semiconductor.

SYD3N020WRH: 1350V/20A RC IGBT with low loss, soft switching, for induction cooking, converter

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.66 VGEth@typ.Tj=25°C: 6.1 Details: SYD3N020WRH 1350V 20A RC trench IGBT, low VCEsat, low switching loss, halogen-free, RoHS, for induction cooking, microwave oven inverter, resonant converter semiconductor solutions.

SYD060Q065AY1S3: 650V/60A trench IGBT, ultra‑low VCE(sat), fast switching, high‑temp resistant

SYD050Q065AY1S3: 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature

SYD40H120ADB: 1200V/40A trench IGBT, low saturation voltage, low loss, high reliability for UPS

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.6 VGEth@typ.Tj=25°C: 5.5 Details: SYD40H120ADB 1200V 40A field‑stop trench IGBT, low VCE(sat), low switching loss, positive temperature coefficient, 175°C, RoHS, solar inverter, UPS, welding power semiconductor.

SYD15H120ADB: 1200V/15A trench IGBT with low loss, positive temp coeff, high reliability for solar

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.85 VGEth@typ.Tj=25°C: 5.9 Details: SYD15H120ADB 1200V 15A field‑stop trench IGBT, low VCE(sat), low switching loss, positive temperature coefficient, 175°C, RoHS, for solar inverter, welder, UPS power semiconductor solutions.

SYD3065SLW: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

[SYSM3F02R12HPD] 1200V 400A SiC MOS module, 2.55mΩ ultra‑low RDS(on), low inductance for motors EV

Package：HPD Voltage(V): 1200 Current(A): 400/600/800 VGEth@typ.Tj=25°C: 3.0 Details: The SYSM3F02R12HPD is a high‑current 1200V SiC MOSFET module with 2.55mΩ on‑resistance. It features low switching losses and <10nH inductance, ideal for EV/HEV motor drives and high‑power converters.

SYD4065RH1: 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching

[MBR30200PT] 200V 30A Schottky diode, 0.83V low VF, high speed, for SMPS & freewheeling

Package: TO247-3L Voltage(V): 200 Current(A): 30 Details: The MBR30200PT is a 200V 30A Schottky diode with 0.83V low forward voltage. It offers high-speed operation and high reliability, ideal for SMPS and freewheeling circuits.

[MBR40200PT] 200V 40A Schottky diode, 0.85V low VF, high frequency, RoHS for SMPS & freewheeling

Package: TO247-3L Voltage(V): 200 Current(A): 40 Details: The MBR40200PT is a 200V 40A Schottky diode with 0.85V forward voltage. It offers high-frequency performance and rugged design, ideal for SMPS and reverse battery protection.

SYD075H065CX1S3: 650V/75A trench IGBT, low VCE(sat), fast switching, 175°C for solar/UPS/welding

[MUR6030PT] 300V 60A fast recovery diode, 30ns trr, low VF, soft recovery for SMPS & inverters

Package: TO247-3L Voltage(V): 300 Current(A): 60 Details: The MUR6030PT is a 300V 60A fast recovery diode with 30ns recovery. It features low forward voltage and soft recovery, ideal for SMPS, motor drives and PFC circuits.

SYD3065SLB: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

[MUR8040PT] 400V 80A fast recovery diode, 35ns trr, low VF, soft recovery for inverters & PFC

Package: TO247-3L Voltage(V): 400 Current(A): 80 Details: The MUR8040PT is a 400V 80A fast recovery diode with 35ns recovery. It offers low forward voltage and soft recovery, ideal for inverters, SMPS and motor drives.

SYD2065SL: 650V/20A IGBT features low loss, fast switching, built-in FRD, easy parallel for UPS

[MUR3060PT] 600V 30A ultrafast diode, 26ns trr, soft recovery, low VF for SMPS & inverters.

Package: TO247-3L Voltage(V): 600 Current(A): 30 Details: The MUR3060PT is a 600V 30A ultrafast recovery diode with 26ns trr. It features soft recovery and low forward voltage, ideal for PFC, inverters and motor drives.

[SYC50P120H4WF] 1200V 50A Trench FS IGBT chip, low Eswitch, 10μs short‑circuit, for EV chargers, BMS

Size(Inch): 8 Type: Std Voltage(V): 1200 Current(A): 50 Effective Die Quantity: 562 Details: The SYC50P120H4WF is a 1200V IGBT chip with Trench FS tech. It features low Eswitch, 10μs short‑circuit ruggedness and parallel capability, ideal for EV charger IGBT, motor drives and BMS applications.

[MUR6060PT] 600V 60A ultrafast diode, 38ns trr, soft recovery, low VF for inverters & PFC

Package: TO247-3L Voltage(V): 600 Current(A): 60 Details: The MUR6060PT is a 600V 60A ultrafast recovery diode with 38ns recovery. It features soft recovery and low forward voltage, ideal for inverters and PFC circuits.

SYD40N120LN: 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters

Package：TO-247-3 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5 Details: SYD40N120LN 1200V 40A trench field-stop IGBT, low VCE(sat), low switching loss, high short-circuit ruggedness, anti-parallel diode, 175°C, RoHS, for UPS, general inverter, high-frequency converter semiconductor solutions.

Power Semiconductor Solutions for
A Sustainable Future

SHYSEMI manufactures IPM, IGBT, SiC MOSFET & bridge rectifiers with in-house chips and 4 factories in China. 23+ years, AEC-Q101 certified. Request a quote!

SHYSEMI's Hot Products

Step Into SHYSEMI

As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.

All Categories - Power Semiconductor Manufacturer | IPM IGBT SiC | SHYSEMI

SYD25H120ADB: 1200V/25A trench IGBT, low VCE(sat), low loss, positive temp coeff for welder/UPS

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 6 Details: SYD25H120ADB 1200V 25A field‑stop trench IGBT, 1.7V saturation voltage, low switching loss, positive temperature coefficient, 175°C, RoHS, solar inverter, welder, UPS power semiconductor.

SYD3N020WRH: 1350V/20A RC IGBT with low loss, soft switching, for induction cooking, converter

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.66 VGEth@typ.Tj=25°C: 6.1 Details: SYD3N020WRH 1350V 20A RC trench IGBT, low VCEsat, low switching loss, halogen-free, RoHS, for induction cooking, microwave oven inverter, resonant converter semiconductor solutions.

SYD060Q065AY1S3: 650V/60A trench IGBT, ultra‑low VCE(sat), fast switching, high‑temp resistant

SYD050Q065AY1S3: 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature

SYD40H120ADB: 1200V/40A trench IGBT, low saturation voltage, low loss, high reliability for UPS

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.6 VGEth@typ.Tj=25°C: 5.5 Details: SYD40H120ADB 1200V 40A field‑stop trench IGBT, low VCE(sat), low switching loss, positive temperature coefficient, 175°C, RoHS, solar inverter, UPS, welding power semiconductor.

SYD15H120ADB: 1200V/15A trench IGBT with low loss, positive temp coeff, high reliability for solar

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.85 VGEth@typ.Tj=25°C: 5.9 Details: SYD15H120ADB 1200V 15A field‑stop trench IGBT, low VCE(sat), low switching loss, positive temperature coefficient, 175°C, RoHS, for solar inverter, welder, UPS power semiconductor solutions.

SYD3065SLW: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

[SYSM3F02R12HPD] 1200V 400A SiC MOS module, 2.55mΩ ultra‑low RDS(on), low inductance for motors EV

Package：HPD Voltage(V): 1200 Current(A): 400/600/800 VGEth@typ.Tj=25°C: 3.0 Details: The SYSM3F02R12HPD is a high‑current 1200V SiC MOSFET module with 2.55mΩ on‑resistance. It features low switching losses and &lt;10nH inductance, ideal for EV/HEV motor drives and high‑power converters.

SYD4065RH1: 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching

[MBR30200PT] 200V 30A Schottky diode, 0.83V low VF, high speed, for SMPS & freewheeling

Package: TO247-3L Voltage(V): 200 Current(A): 30 Details: The MBR30200PT is a 200V 30A Schottky diode with 0.83V low forward voltage. It offers high-speed operation and high reliability, ideal for SMPS and freewheeling circuits.

[MBR40200PT] 200V 40A Schottky diode, 0.85V low VF, high frequency, RoHS for SMPS & freewheeling

Package: TO247-3L Voltage(V): 200 Current(A): 40 Details: The MBR40200PT is a 200V 40A Schottky diode with 0.85V forward voltage. It offers high-frequency performance and rugged design, ideal for SMPS and reverse battery protection.

SYD075H065CX1S3: 650V/75A trench IGBT, low VCE(sat), fast switching, 175°C for solar/UPS/welding

[MUR6030PT] 300V 60A fast recovery diode, 30ns trr, low VF, soft recovery for SMPS & inverters

Package: TO247-3L Voltage(V): 300 Current(A): 60 Details: The MUR6030PT is a 300V 60A fast recovery diode with 30ns recovery. It features low forward voltage and soft recovery, ideal for SMPS, motor drives and PFC circuits.

SYD3065SLB: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

[MUR8040PT] 400V 80A fast recovery diode, 35ns trr, low VF, soft recovery for inverters & PFC

Package: TO247-3L Voltage(V): 400 Current(A): 80 Details: The MUR8040PT is a 400V 80A fast recovery diode with 35ns recovery. It offers low forward voltage and soft recovery, ideal for inverters, SMPS and motor drives.

SYD2065SL: 650V/20A IGBT features low loss, fast switching, built-in FRD, easy parallel for UPS

[MUR3060PT] 600V 30A ultrafast diode, 26ns trr, soft recovery, low VF for SMPS & inverters.

Package: TO247-3L Voltage(V): 600 Current(A): 30 Details: The MUR3060PT is a 600V 30A ultrafast recovery diode with 26ns trr. It features soft recovery and low forward voltage, ideal for PFC, inverters and motor drives.

[SYC50P120H4WF] 1200V 50A Trench FS IGBT chip, low Eswitch, 10μs short‑circuit, for EV chargers, BMS

Size(Inch): 8 Type: Std Voltage(V): 1200 Current(A): 50 Effective Die Quantity: 562 Details: The SYC50P120H4WF is a 1200V IGBT chip with Trench FS tech. It features low Eswitch, 10μs short‑circuit ruggedness and parallel capability, ideal for EV charger IGBT, motor drives and BMS applications.

[MUR6060PT] 600V 60A ultrafast diode, 38ns trr, soft recovery, low VF for inverters & PFC

Package: TO247-3L Voltage(V): 600 Current(A): 60 Details: The MUR6060PT is a 600V 60A ultrafast recovery diode with 38ns recovery. It features soft recovery and low forward voltage, ideal for inverters and PFC circuits.

SYD40N120LN: 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters

Package：TO-247-3 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5 Details: SYD40N120LN 1200V 40A trench field-stop IGBT, low VCE(sat), low switching loss, high short-circuit ruggedness, anti-parallel diode, 175°C, RoHS, for UPS, general inverter, high-frequency converter semiconductor solutions.

Power Semiconductor Solutions for A Sustainable Future

SHYSEMI manufactures IPM, IGBT, SiC MOSFET & bridge rectifiers with in-house chips and 4 factories in China. 23+ years, AEC-Q101 certified. Request a quote!

SHYSEMI's Hot Products

Step Into SHYSEMI

As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.

Package：HPD Voltage(V): 1200 Current(A): 400/600/800 VGEth@typ.Tj=25°C: 3.0 Details: The SYSM3F02R12HPD is a high‑current 1200V SiC MOSFET module with 2.55mΩ on‑resistance. It features low switching losses and <10nH inductance, ideal for EV/HEV motor drives and high‑power converters.

Power Semiconductor Solutions for
A Sustainable Future