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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
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WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM Modules
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
  • Technology 
    • Latest IPM Technology
    • High Voltage (HV) Die Technolog
    • Reliability & Qualification
  • About Us 
    • Our Company
    • Technical Team
    • Custom Solutions
  • Contact Us
  • Blog
  • …  
    • Home
    • Products 
      • IPM Modules
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

All Categories - Design and manufacture semiconductor products - SHYSEMI

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IGBT Modules
HOT PRODUCTS
IPM Modules
IGBT Discretes
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[SYD2065SLW]

Package:TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.5 Details:

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[SYD3065SLB] 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4.0 Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor offers low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, easy parallel operation, multi-packages (TO‑247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions. *For English specification, please contact us.

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[SYD1565SLA] 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability 1

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 6.0 Details: SYD1565SLA(P/B/D) 650V 15A IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, positive temperature coefficient, 5μs short-circuit withstand, multi-packages (TO‑220/220F/252/263), ideal for UPS, PFC, motor control & power supply semiconductor solutions. *For English specifications, please contact us.

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[SYD2065SLB] 650V/20A IGBT delivers low saturation voltage, low loss, built-in fast recovery diode

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.5 Details: SYD2065SLA/SLP/SLB/SLD 650V 20A IGBT transistor features low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, multiple packages (TO-247/220/220F/263), ideal for UPS, PFC, motor control and power supply semiconductor solutions. *For English specifications, please contact us.

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[SYD1565SL] 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 6.0 Details: SYD1565SLA(P/B/D) 650V 15A IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, positive temperature coefficient, 5μs short-circuit withstand, multi-packages (TO‑220/220F/252/263), ideal for UPS, PFC, motor control & power supply semiconductor solutions. *For English specifications, please contact us.

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[SYMT150CU120T2VH] 1200V/150A IGBT module for industrial power applications

VCE(SAT)@typ.Tj=25°C: 5.9 VGEth@typ.Tj=25°C: 1.7 Details: SYMT150CU120T2VH-M 1200V 150A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, 2500V isolation, RoHS compliant, ideal for welding, HEV inverter, UPS and industrial motor drive semiconductor solutions.

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[SYMT10PI120B3H] 1200V/10A Trench FS IGBT Module with low loss, fast switching, and high reliability

Package:EasyPIM1 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5.5 Details: The SYMT10PI120B3H 1200V IGBT Module is designed for high-efficiency industrial inverter and servo motor drive systems. Built with advanced Trench & Field Stop IGBT technology, it delivers low VCE(sat), fast switching performance, low power loss, and high short-circuit ruggedness. With optimized thermal management, low stray inductance, and reliable high-temperature operation up to 175°C, this industrial-grade IGBT power module is ideal for motor drives, automation equipment, energy conversion systems, and high-reliability power electronics applications.

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[SYMT150HF120T1VH-SF] 1200V/150A, Field Stop Trench Gate IGBT Module with ultra-low VCE(sat)

VCE(SAT)@typ.Tj=25°C: 5.7 VGEth@typ.Tj=25°C: 1.7 Details: Field Stop Trench Gate IGBT Module delivers low conduction loss, fast switching performance, low stray inductance, and high short-circuit withstand capability, optimized for industrial inverter, welding machine, UPS, SMPS, induction heating, and high-power conversion applications.

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[SYMF100HF120T1VH] 1200V/100A NPT IGBT Module featuring low switching loss, low VCE(sat), and >10μs

VCE(SAT)@typ.Tj=25°C: 5 VGEth@typ.Tj=25°C: 3.5 Detail: IGBT Module integrates advanced NPT IGBT technology with low saturation voltage, fast switching performance, low stray inductance, and robust short-circuit withstand capability, making it ideal for welding machines, UPS, SMPS, induction heating, and industrial inverter applications.

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[SYMT100HF170T1VH] 1700V/100A IGBT module features low saturation voltage, low switching loss

VCE(SAT)@typ.Tj=25°C: 6 VGEth@typ.Tj=25°C: 2.4 Details: SYMT100HF170T1VH 1700V 100A field stop trench gate IGBT module offers >10μs short-circuit capability, low VCE(sat), low switching loss, 4500V isolation, RoHS compliance, ideal for inverters, UPS, servo drives and wind power semiconductor solutions.

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[SYIM776C-SST] 600V/20A, Compact SIP intelligent power module with SiC PFC, low switching loss

Strength: 3Φ PFC: 40A 600V Applicable Power: Up to 100 kHz, with TDF Details: SYIM776C-SST 600V Intelligent Power Module features Hybrid SiC technology, RC-IGBT architecture, low EMI performance, integrated bootstrap circuit, and NTC temperature sensing, optimized for industrial inverter, motor drive, UPS, SMPS, and energy-efficient power electronics systems.

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[SYD2065SLA] 650V/20A IGBT delivers low saturation voltage, low switching loss and built-in FRD

Package:TO-220 VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.5 Details: SYD2065SLA/SLP/SLB/SLD 650V 20A high-performance IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, multiple packages (TO-247/220/220F/263), ideal for UPS, PFC, motor drive & power supply semiconductor solutions. *For English specifications, please contact us.

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[SYD3065SLA] 650V/30A IGBT offers low saturation voltage, fast switching, built-in FRD

Package:TO-220 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4 Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor features low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, multiple packages (TO-247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions. *For English specifications, please contact us.

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[SYIM756C-SAAT] 600V/15A Compact SIP intelligent power module with SiC PFC, optimized thermal design

Strength: 3Φ PFC: 40A 600V Applicable power: Up to 100 kHz, with NTC Details: SYIM756C-SST MIPS™ Intelligent Power System integrates 600V IGBT inverter, high-frequency SiC PFC, NTC temperature sensing, under-voltage protection, and low EMI design, ideal for motor drives, UPS, SMPS, and energy-efficient power conversion systems.

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[SYMT100PI120T6H-M] 1200V/100A IGBT module features low saturation voltage, built-in NTC

VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5.5 Details: SYMT100PI120T6H-M 1200V 100A field stop trench gate IGBT module offers >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, NTC thermistor, 2500V isolation, RoHS compliant, ideal for industrial inverters, servo drives, brake chopper and rectifier semiconductor solutions.

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[SYMT150HF170T2VH] 1700V/150A IGBT module features low saturation voltage, short-circuit capability

VCE(SAT)@typ.Tj=25°C: 6.0 VGEth@typ.Tj=25°C: 2.3 Details: SYMT150HF170T2VH 1700V 150A high-voltage IGBT module offers >10μs short-circuit withstand, low VCE(sat), low switching loss, 2500V isolation, RoHS compliance, ideal for industrial inverters, motor drives and UPS semiconductor solutions.

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[SYIM756C-SST] 600V/15A, Hybrid SiC IPM with integrated PFC, low power loss, and built-in protection

Strength: 3Φ PFC: 40A 600V Applicable powerUp to 100 kHz, with NTC Details: 600V Intelligent Power Module features Hybrid SiC technology, low switching loss IGBT, SiC Schottky Barrier Diode (SBD), integrated bootstrap circuit, and advanced protection functions for inverter, converter, and motor control applications.

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[SYIM776C-SAAT] 600V/20A, Hybrid SiC IPM integrating 3-phase inverter and high-frequency PFC

Strength: 3Φ PFC: 40A 600V Applicable power: Up to 100 kHz, with NTC Details: SYIM776C-SST Hybrid SiC IPM combines 600V 3-phase RC-IGBT inverter, 40A PFC, SiC Schottky Barrier Diode (SiC SBD), and integrated protection functions to deliver high-efficiency power conversion and stable motor control for inverter and converter applications.

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[SYMT15PI120B3H] 1200V/15A Trench Gate IGBT Module with low switching loss, fast response

Package:EasyPIM1 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5.8 Details: SYMT15PI120B3H is a 1200V high-efficiency IGBT module designed for industrial inverters and motor drive applications, featuring low VCE(sat), fast switching, high short-circuit capability, and reliable thermal performance.

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[SYMT150PI120T6H-T4M] 1200V/150A IGBT module delivers low saturation voltage and built-in NTC

VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.9 Details: SYMT150PI120T6H-T4M 1200V 150A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low switching loss, low stray inductance, NTC thermistor, 2500V isolation, RoHS compliant, ideal for industrial inverters, servo drives, brake chopper and rectifier semiconductor solutions.

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  • Chip Designer and Manufacturer

    SHYSEMI design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

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    As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.

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