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Free Sample
WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM Modules
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
  • Technology 
    • Latest IPM Technology
    • High Voltage (HV) Die Technolog
    • Reliability & Qualification
  • About Us 
    • Our Company
    • Technical Team
    • Custom Solutions
  • Contact Us
  • Blog
  • …  
    • Home
    • Products 
      • IPM Modules
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • Energy Vehicle
      • Home Appliance
      • Renewable Energy
      • Industrial Equipment
      • Data Centers
    • Technology 
      • Latest IPM Technology
      • High Voltage (HV) Die Technolog
      • Reliability & Qualification
    • About Us 
      • Our Company
      • Technical Team
      • Custom Solutions
    • Contact Us
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Free Sample
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Mid High Power F Series-62mm - Design and manufacture semiconductor products - SHYSEMI

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Mid High Power F Series-62mm
HOT PRODUCTS
IPM Modules
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[SYMT200CU120T2VH] 1200V/200A IGBT module for welding, HEV and industrial drive

VCE(SAT)@typ.Tj=25°C: 6 VGEth@typ.Tj=25°C: 3.15 Details: SYMT200CU120T2VH-M 1200V 200A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, 2500V isolation, RoHS compliant, ideal for welding, HEV inverter, UPS, brake chopper and industrial motor drive semiconductor solutions.

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[SYMT150CU120T2VH] 1200V/150A IGBT module for industrial power applications

VCE(SAT)@typ.Tj=25°C: 5.9 VGEth@typ.Tj=25°C: 1.7 Details: SYMT150CU120T2VH-M 1200V 150A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, 2500V isolation, RoHS compliant, ideal for welding, HEV inverter, UPS and industrial motor drive semiconductor solutions.

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[SYMT200HF170T2VH] 1700V/200A IGBT module delivers low saturation voltage, short-circuit reliability

VCE(SAT)@typ.Tj=25°C: 6.0 VGEth@typ.Tj=25°C: 2.3 Details: SYMT200HF170T2VH 1700V 200A high-voltage IGBT module features >10μs short-circuit withstand, low VCE(sat), low switching loss, low stray inductance, 2500V isolation, RoHS compliant, ideal for industrial inverters, motor drives and UPS semiconductor solutions.

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[SYMT150HF170T2VH] 1700V/150A IGBT module features low saturation voltage, short-circuit capability

VCE(SAT)@typ.Tj=25°C: 6.0 VGEth@typ.Tj=25°C: 2.3 Details: SYMT150HF170T2VH 1700V 150A high-voltage IGBT module offers >10μs short-circuit withstand, low VCE(sat), low switching loss, 2500V isolation, RoHS compliance, ideal for industrial inverters, motor drives and UPS semiconductor solutions.

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[SYMT300HF120T2VH-M] 1200V/300A IGBT module delivers low saturation voltage, high reliability

VCE(SAT)@typ.Tj=25°C: 5.9 VGEth@typ.Tj=25°C: 1.9 Details: SYMT300HF120T2VH-M 1200V 300A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low switching loss, low stray inductance, 2500V isolation and RoHS compliance, ideal for welding, HEV inverter, UPS and industrial motor drive semiconductor solutions.

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[SYMT200HF120T2VH-M] 1200V/200A high-current IGBT module delivers low saturation voltage

VCE(SAT)@typ.Tj=25°C: 5.7 VGEth@typ.Tj=25°C: 1.8 Details: SYMT200HF120T2VH-M 1200V 200A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low loss, low stray inductance, 2500V isolation, RoHS compliant, ideal for welding, HEV inverter, UPS, industrial motor drive semiconductor solutions.

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[SYMT100HF170T1VH] 1700V/100A IGBT module features low saturation voltage, low switching loss

VCE(SAT)@typ.Tj=25°C: 6 VGEth@typ.Tj=25°C: 2.4 Details: SYMT100HF170T1VH 1700V 100A field stop trench gate IGBT module offers >10μs short-circuit capability, low VCE(sat), low switching loss, 4500V isolation, RoHS compliance, ideal for inverters, UPS, servo drives and wind power semiconductor solutions.

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    SHYSEMI design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

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    As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.

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