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WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM by Package
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
  • Technology 
    • Latest IPM Technology
    • High Voltage (HV) Die Technolog
    • Reliability & Qualification
  • About Us 
    • Our Company
    • Technical Team
    • Custom Solutions
  • Contact Us
  • Blog
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    • Home
    • Products 
      • IPM by Package
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • Energy Vehicle
      • Home Appliance
      • Renewable Energy
      • Industrial Equipment
      • Data Centers
    • Technology 
      • Latest IPM Technology
      • High Voltage (HV) Die Technolog
      • Reliability & Qualification
    • About Us 
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
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[DIP-26] UVLO on all channels,  Cross-conduction protection

[DIP-26] UVLO on all channels, Cross-conduction protection

DIP-26 UVLO on all channels, Cross-conduction protection. Its key advantage lies in its wider pin pitch compared. Used in industrial power conversion.
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Its key advantage lies in its wider pin pitch compared with standard DIP or SOP packages. The increased pin spacing directly provides greater creepage and clearance distances, which effectively prevent arcing or short-circuiting between adjacent pins under high-humidity or contaminated conditions.
This design feature greatly improves system reliability and safety in high-voltage environments, making it ideal for applications that must withstand hundreds or even thousands of volts over extended operation periods.

Features:

  • Fully insulated Double in line power module,integrated with 3Φ full bridge
  • Using lMS insulated and heat-dissipating substrate
  • DlP(Double in line)fully insulated packagestructure is adopted
  • Active high, compatible with TTL / CMOS level
  • Integrated bootstrap functionality
  • Independent inverter over-current shutdown
  • Under-voltage lockout at all channels
  • Cross-conduction prevention
  • Fault signal output
  • Independent low side lGBT emitter
 
[DIP-26] UVLO on all channels,  Cross-conduction protection
Internal Electrical Schematic:  
DIP-26: Strong drive capability perfectly
  • Power Semiconductor Solutions for A Sustainable Future

    SHYSEMI manufactures IPM module, IGBT, SiC MOSFET & bridge rectifiers with in-house chips and 4 factories in China. 23+ years, AEC-Q101 certified. Request a quote!

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    Withstand 3 Consecutive

    Short-Circuit Tests

    SHYSEMI’s SYIM776C-SST 600V/20A SIP35 IPM Passes Three Consecutive Short-Circuit Tests in Topband’s Application Testing

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  • Step Into SHYSEMI

    As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.

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