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[SYC50P120H4WF] 1200V 50A Trench FS IGBT chip, low Eswitch, 10μs short‑circuit, for EV chargers, BMS
Size(Inch): 8
Type: Std
Voltage(V): 1200
Current(A): 50
Effective Die Quantity: 562
Details: The SYC50P120H4WF is a 1200V IGBT chip with Trench FS tech. It features low Eswitch, 10μs short‑circuit ruggedness and parallel capability, ideal for EV charger IGBT, motor drives and BMS applications.
Type: Std
Voltage(V): 1200
Current(A): 50
Effective Die Quantity: 562
Details: The SYC50P120H4WF is a 1200V IGBT chip with Trench FS tech. It features low Eswitch, 10μs short‑circuit ruggedness and parallel capability, ideal for EV charger IGBT, motor drives and BMS applications.
More Details
Applications:
- Inverter For Motor Driver
- BMS
- EV charger
Features:
- Trench FS Technology
- Low Eswitch
- 10µs Short Circuit Capability
- Parallel Suitable
- Positive Vce(sat) Temperature Coefficient
![[SYC50P120H4WF] 1200V 50A Trench FS IGBT chip, low Eswitch, 10μs short‑circuit, for EV chargers, BMS](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/421401_927291.png)
Die Chip Size:
![[SYC50P120H4WF]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/983253_234877.png)