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WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
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    • IPM Modules
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
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    • FRD(MUR)
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
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[SYD050Q065AY1S3] 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature

[SYD050Q065AY1S3] 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature

Package:TO-247-3L
VCE(SAT)@typ.Tj=25°C: 1.8
VGEth@typ.Tj=25°C: 4.5
Details: SYD050Q065AY1S3 650V 50A trench field‑stop IGBT, low VCE(sat), low switching loss, fast recovery, 175°C junction, RoHS, for solar converter, UPS, welding and high‑frequency power semiconductor solutions.

*For English specification, please contact us.
Specification
Specification
More Details

Applications:

  1. Solar Converter
  2. Uninterrupted Power Supply
  3. Welding Converter
  4. Mid to High Range Switching Frequency Converter
Features: 
◼ VCE(sat)(typ.) =1.8V@VGE=15V, IC=50A 
◼ Maximum Junction Temperature 175℃ 
◼ Pb-free Lead Plating; RoHS Compliant

Package Dimensions Diagram:

[SYD050Q065AY1S3]

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