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[SYD1565SLA] 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability 1
Package：TO-220F
VCE(SAT)@typ.Tj=25°C: 1.8
VGEth@typ.Tj=25°C: 6.0
Details: SYD1565SLA(P/B/D) 650V 15A IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, positive temperature coefficient, 5μs short-circuit withstand, multi-packages (TO‑220/220F/252/263), ideal for UPS, PFC, motor control & power supply semiconductor solutions.
*For English specifications, please contact us.
VCE(SAT)@typ.Tj=25°C: 1.8
VGEth@typ.Tj=25°C: 6.0
Details: SYD1565SLA(P/B/D) 650V 15A IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, positive temperature coefficient, 5μs short-circuit withstand, multi-packages (TO‑220/220F/252/263), ideal for UPS, PFC, motor control & power supply semiconductor solutions.
*For English specifications, please contact us.
More Details
Applications:
- UPS
- PFC
- Motor Control
Features:
- Saturation Voltage Drop: Positive Temperature Coefficient
- Easy to Use in Parallel Circuits
- Low Switching Loss
- Built-in Fast Recovery Diode
- High Reliability and Thermal Stability
- Good Parameter Consistency
Package Dimension Diagram:
![[SYD1565SLA] 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability 1](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/426588_23113.png)