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[SYD3065SLA] 650V/30A IGBT offers low saturation voltage, fast switching, built-in FRD
Package：TO-220
VCE(SAT)@typ.Tj=25°C: 1.9
VGEth@typ.Tj=25°C: 4
Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor features low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, multiple packages (TO-247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions.
*For English specifications, please contact us.
VCE(SAT)@typ.Tj=25°C: 1.9
VGEth@typ.Tj=25°C: 4
Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor features low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, multiple packages (TO-247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions.
*For English specifications, please contact us.
More Details
Applications:
- UPS
- Motor Control
Features:
- Saturation Voltage Drop: Positive Temperature Coefficient
- Easy to Use in Parallel Circuits
- Low Switching Loss
- Built-in Fast Recovery Diode
- High Reliability and Thermal Stability
- Good Parameter Consistency
- Minimum short-circuit resistance time: 5 µs
Package Dimension Diagram:
![[SYD3065SLA] 650V/30A IGBT offers low saturation voltage, fast switching, built-in FRD](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/650285_471233.png)