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WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
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    • IPM Modules
    • IGBT Modules
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    • IGBT Chips
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
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[SYIM776C-SAAT] 600V/20A, Hybrid SiC IPM integrating 3-phase inverter and high-frequency PFC

[SYIM776C-SAAT] 600V/20A, Hybrid SiC IPM integrating 3-phase inverter and high-frequency PFC

Strength: 3Φ
PFC: 40A 600V
Applicable power: Up to 100 kHz, with NTC
Details: SYIM776C-SST Hybrid SiC IPM combines 600V 3-phase RC-IGBT inverter, 40A PFC, SiC Schottky Barrier Diode (SiC SBD), and integrated protection functions to deliver high-efficiency power conversion and stable motor control for inverter and converter applications.
Specification
Specification
More Details

Applications:

  • Inverter
  • converter

Features:

  • Fully Insulated Single In-line Power Module
  • Using IMS Insulated and Heat-dissipating Substrate
  • SIP (single in line) Fully Insulated Package Structure is Adopted
  • Three-phase full bridge 20A 600V, PFC 40A 600V
  • Active High, Compatible With TTL / CMOS level
  • Integrated Bootstrap Functionality
  • PFC uses SiC SBD
  • Independent Inverter and PFC Over-current Shutdown
  • Under-voltage Lockout at all Channels
  • Cross-conduction Prevention
  • Fault Signal Output
  • Independent Low Side IGBT Emitter
  • Insulation withstand voltage grade: 2000 Vrms / min
  • Built-in NTC thermistor for temperature monitor
Internal Electrical Schematic: 
[SYIM776C-SAAT] 600V/20A, Hybrid SiC IPM integrating 3-phase inverter and high-frequency PFC
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