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![[SYSD120N040BH] 1200V 40mΩ SiC MOSFET, AEC-Q101, fast switching, for automotive power converters](https://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_1000,w_500,f_auto,q_auto/23234143/527786_733531.png)
[SYSD120N040BH] 1200V 40mΩ SiC MOSFET, AEC-Q101, fast switching, for automotive power converters
Package:TO-247-3L
Voltage(V): 1200
RDS(ON), TYP: 60
Details: The SYSD120N040BH is an automotive-grade 1200V SiC MOSFET with ultra-low 40mΩ RDS(on). It features fast switching, AEC-Q101 qualification and high-temperature tolerance, ideal for EV converters and industrial power supplies.
Voltage(V): 1200
RDS(ON), TYP: 60
Details: The SYSD120N040BH is an automotive-grade 1200V SiC MOSFET with ultra-low 40mΩ RDS(on). It features fast switching, AEC-Q101 qualification and high-temperature tolerance, ideal for EV converters and industrial power supplies.
More Details
Applications:
- Asymmetrical Bridge
- Converter
- Inverter
- Single Switch Forward Flyback
Features:
- Low drain-source on-resistance: RDS(ON)=40mΩ (typ.)
- Easy to control Gate switching
- Enhancement mode: Vth = 2 to 4V
- AEC-Q101 qualified
Packaging and Internal Circuit:
![[SYSD120N040BH] 1200V 40mΩ SiC MOSFET, AEC-Q101, fast switching, for automotive power converters](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/788564_289047.png)





