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[SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters
  • [SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters
  • [SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters

[SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters

Package：TO-247-3L/4L
Voltage(V): 1700
RDS(ON), TYP: 22
Details: The SYSD170N022AG1 is a 1700V high‑power SiC MOSFET with ultra‑low 22mΩ RDS(on). It delivers fast switching, low gate charge and RoHS compliance, ideal for industrial high‑voltage inverters and renewable energy applications
Specification
Specification
More Details

Applications: 

  • Asymmetrical Bridge
  • Converter
  • Inverter
  • Single Switch Forward
  • Flyback

Features: 

  • Low drain-source on-resistance: RDS(ON)=22mO (typ.)
  • Easy to control Gate switching
  • Enhancement mode: Vth = 2.0 to 4.0 V
 
[SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters
Packaging and Internal Circuit: 
[SYSD170N022AG1]
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