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[SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters
  • [SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters
  • [SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters

[SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters

The SYSD170N022AG1 is a 1700V high-power SiC MOSFET with ultra-low 22mΩ RDS(on). Used in EV power systems, solar inverters and industrial drives.
Specification
Specification
More Details

Applications: 

  • Asymmetrical Bridge
  • Converter
  • Inverter
  • Single Switch Forward
  • Flyback

Features: 

  • Low drain-source on-resistance: RDS(ON)=22mO (typ.)
  • Easy to control Gate switching
  • Enhancement mode: Vth = 2.0 to 4.0 V
 
[SYSD170N022AG1] 1700V 22mΩ SiC MOSFET, low RDS(on), fast switching, RoHS compliant, for converters
Packaging and Internal Circuit: 
[SYSD170N022AG1]
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