We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
Less Energy
More Efficiency
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    • IPM
    • IGBT Modules
    • IGBT Discretes
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    • Bridge Rectifier
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    • Home
    • Products 
      • IPM
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • New Energy Vehicle
      • Home Appliance
      • Energy Storage
      • Industrial Equipment
      • Data Centers
    • Technology
    • Our Teams
    • Blog
    • Contact Us
Sample Request
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
Less Energy
More Efficiency
  • Home
  • Products 
    • IPM
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • New Energy Vehicle
    • Home Appliance
    • Energy Storage
    • Industrial Equipment
    • Data Centers
  • Technology
  • Our Teams
  • Blog
  • Contact Us
  • …  
    • Home
    • Products 
      • IPM
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • New Energy Vehicle
      • Home Appliance
      • Energy Storage
      • Industrial Equipment
      • Data Centers
    • Technology
    • Our Teams
    • Blog
    • Contact Us
Sample Request
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Ray — Head of R&D Driving Innovation in Power Semiconductor Technologies

Ray, a graduate of Tsinghua University, serves as the driving force behind our research and development strategy. As Head of R&D, he leads the company’s innovation roadmap in wide-bandgap semiconductors, Intelligent Power Modules (IPM), and IGBT module design, translating advanced device physics into scalable, high-reliability power solutions for global markets.

With a strong academic foundation and deep hands-on experience in power electronics and semiconductor device engineering, Ray plays a critical role in shaping next-generation power semiconductor platforms that meet the rapidly evolving demands of electric vehicles (EVs), renewable energy systems, and industrial motor drives.

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Ray earned his degree from Tsinghua University, one of the world’s leading institutions in engineering and applied sciences. His academic training provided a rigorous grounding in semiconductor physics, power device structures, and electronic materials, forming the basis for his long-term focus on high-performance power semiconductor technologies.

From the outset of his career, Ray demonstrated a strong ability to bridge theoretical research and practical engineering, a skill that continues to define his leadership approach. Rather than pursuing isolated device optimization, he emphasizes system-level performance—ensuring that power semiconductor solutions deliver measurable value at the application level.

Expertise in Wide-Bandgap Semiconductors and Power Modules

Ray’s technical expertise centers on wide-bandgap semiconductor technologies, particularly silicon carbide (SiC) devices, as well as advanced IPM and IGBT module architectures. He has led multiple development programs focused on improving:

  • Thermal performance through optimized chip layouts, advanced packaging, and low-thermal-resistance module designs
  • Switching efficiency, reducing switching losses and enabling higher operating frequencies
  • Electrical ruggedness and reliability, ensuring stable operation under harsh conditions such as high voltage, high current, and wide temperature ranges

Under his leadership, the R&D team continuously refines power module design methodologies, balancing efficiency.

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