• 1700V High Power Density Technology

    SHYSEMI's IGBT chips are independently designed using the 6th generation Trench Field process. They have developed 1200V (75A-300A) chips and corresponding FRD series products, as well as 1700V (150A/200A) series products. The performance of these products ranks at the forefront of the industry, and the 1700V series has reached the leading level in China.

  • 1700V Performance with 1200V-Class Die Size

    Smaller chip area, higher efficiency, and lower system cost.

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    SHYSEMI’s Core Strengths Of Chips

    1. Tape-out conducted at the world’s third-largest wafer fab (Huahong Group).
    2. Chips utilize SHYSEMI's proprietary 6th-generation Trench Field technology.
    3. Enables operating voltage increase from 1200V to 1700V within the same die size.
    4. Vcesat coefficient is notably lower than domestic counterparts.
    5. Wafer-level CP test data provided.
    6. Supports customer-customized chip development.

  • Products with self-developed chips

    SHYSEMI has developed 1200V (75A - 300A) chips and the corresponding FRD series products, and has also launched 1700V (150A/200A) series products. The performance of these products has reached the leading level in China.

    IGBT Chip

    • 6th-gen Trench IGBT Tech
    • 1200V–1700V Full Range
    • Industry Top Performance
    • Leading 1700V Tech
    • Low Vce(sat) & Loss
    • High Energy Efficiency

    FRD / MUR

    • Fast Recovery Performance
    • High Voltage & Current Capability
    • Ultra-Low Reverse Leakage
    • Low Forward Voltage Drop
    • Excellent Thermal Stability
    • High-Frequency Efficiency

    SIC MOS

    • Mass Production Certified
    • 5%–8% Higher Efficiency
    • High Power Density
    • High Temp Resistance
    • Fast Switching
    • Simplified Circuit
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