• Silicon carbide power devices offer superior heat resistance, enabling them to withstand higher operating temperatures.

    This is crucial for on-board chargers (OBCs) because charging generates heat, and silicon carbide devices are better able to handle high-temperature environments, improving system reliability and lifespan.

    In the on-board charger OBC, SiC MOSFET (metal oxide semiconductor field effect transistor) can be used as a replacement for IGBT (insulated gate bipolar transistor) and MOSFET devices.

    OBC Application

    • Halogen Free, RoHS Compliant
    • Easy to Control Gate Switching
    • High Blocking Voltage With Low On-Resistance

  • Block Diagram

    Silicon carbide devices switch faster than traditional silicon power devices, enabling higher switching frequencies. This means that on-board chargers (OBCs) can more effectively control current and voltage, reduce power loss and electromagnetic interference, and improve system response speed and conversion efficiency.

    Benefits

    • Higher operating temperatures
    • Faster switching speeds
    • Lower on-resistance
    • Higher withstand voltage

  • Recommend Products: SiC MOS, SiC Module

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