• Silicon carbide power devices offer superior heat resistance, enabling them to withstand higher operating temperatures.

    This is crucial for on-board chargers (OBCs) because charging generates heat, and silicon carbide devices are better able to handle high-temperature environments, improving system reliability and lifespan.

    In the on-board charger OBC, SiC MOSFET (metal oxide semiconductor field effect transistor) can be used as a replacement for IGBT (insulated gate bipolar transistor) and MOSFET devices.

    OBC Application

    • Halogen Free, RoHS Compliant
    • Easy to Control Gate Switching
    • High Blocking Voltage With Low On-Resistance

  • Replacement list of Models with Industry's Top Enterprises

    The chips used in the automotive field are one of SHYSEMI's most experienced product lines. They have undergone historical accumulation and quality iterations. Please feel free to purchase with confidence.

  • Block Diagram

    Silicon carbide devices switch faster than traditional silicon power devices, enabling higher switching frequencies. This means that on-board chargers (OBCs) can more effectively control current and voltage, reduce power loss and electromagnetic interference, and improve system response speed and conversion efficiency.

    Benefits

    • Higher operating temperatures
    • Faster switching speeds
    • Lower on-resistance
    • Higher withstand voltage

  • Recommend Products: SiC MOS, SiC Module

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