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WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM Modules
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
  • Application 
    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
  • Technology 
    • Latest IPM Technology
    • High Voltage (HV) Die Technolog
    • Reliability & Qualification
  • About Us 
    • Our Company
    • Technical Team
    • Custom Solutions
  • Contact Us
  • Blog
  • …  
    • Home
    • Products 
      • IPM Modules
      • IGBT Modules
      • IGBT Discretes
      • IGBT Chips
      • SiC
      • FRD(MUR)
      • Bridge Rectifier
    • Application 
      • Energy Vehicle
      • Home Appliance
      • Renewable Energy
      • Industrial Equipment
      • Data Centers
    • Technology 
      • Latest IPM Technology
      • High Voltage (HV) Die Technolog
      • Reliability & Qualification
    • About Us 
      • Our Company
      • Technical Team
      • Custom Solutions
    • Contact Us
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

TO-220 - Design and manufacture semiconductor products - SHYSEMI

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IGBT Modules
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IPM Modules
TO-220
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[SYD2065SLB] 650V/20A IGBT delivers low saturation voltage, low loss, built-in fast recovery diode

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.5 Details: SYD2065SLA/SLP/SLB/SLD 650V 20A IGBT transistor features low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, multiple packages (TO-247/220/220F/263), ideal for UPS, PFC, motor control and power supply semiconductor solutions. *For English specifications, please contact us.

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[SYD3065SLB] 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4.0 Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor offers low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, easy parallel operation, multi-packages (TO‑247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions. *For English specification, please contact us.

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[SYD1565SLA] 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability 1

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 6.0 Details: SYD1565SLA(P/B/D) 650V 15A IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, positive temperature coefficient, 5μs short-circuit withstand, multi-packages (TO‑220/220F/252/263), ideal for UPS, PFC, motor control & power supply semiconductor solutions. *For English specifications, please contact us.

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[SYD1565SL] 650V/15A IGBT provides low loss, built-in FRD and excellent parallel capability

Package:TO-220F VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 6.0 Details: SYD1565SLA(P/B/D) 650V 15A IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, positive temperature coefficient, 5μs short-circuit withstand, multi-packages (TO‑220/220F/252/263), ideal for UPS, PFC, motor control & power supply semiconductor solutions. *For English specifications, please contact us.

product image

[SYD3065SLA] 650V/30A IGBT offers low saturation voltage, fast switching, built-in FRD

Package:TO-220 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4 Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor features low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, multiple packages (TO-247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions. *For English specifications, please contact us.

product image

[SYD2065SLA] 650V/20A IGBT delivers low saturation voltage, low switching loss and built-in FRD

Package:TO-220 VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.5 Details: SYD2065SLA/SLP/SLB/SLD 650V 20A high-performance IGBT transistor features low VCE(sat), low conduction & switching loss, fast recovery diode, multiple packages (TO-247/220/220F/263), ideal for UPS, PFC, motor drive & power supply semiconductor solutions. *For English specifications, please contact us.

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