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SYD060Q065AY1S3: 650V/60A trench IGBT, ultra‑low VCE(sat), fast switching, high‑temp resistant
Package:TO-247-3L
VCE(SAT)@typ.Tj=25°C: 1.6
VGEth@typ.Tj=25°C: 4.5
Details: SYD060Q065AY1S3 650V 60A trench field‑stop IGBT, 1.6V low saturation voltage, fast switching loss, 175°C junction, built‑in FRD, RoHS, solar converter, UPS, welding, high‑frequency power semiconductor.
*For English specification, please contact us.
VCE(SAT)@typ.Tj=25°C: 1.6
VGEth@typ.Tj=25°C: 4.5
Details: SYD060Q065AY1S3 650V 60A trench field‑stop IGBT, 1.6V low saturation voltage, fast switching loss, 175°C junction, built‑in FRD, RoHS, solar converter, UPS, welding, high‑frequency power semiconductor.
*For English specification, please contact us.
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