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[SYD3065SLB] 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD
Package：TO-220F
VCE(SAT)@typ.Tj=25°C: 1.9
VGEth@typ.Tj=25°C: 4.0
Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor offers low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, easy parallel operation, multi-packages (TO‑247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions.
*For English specification, please contact us.
VCE(SAT)@typ.Tj=25°C: 1.9
VGEth@typ.Tj=25°C: 4.0
Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor offers low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, easy parallel operation, multi-packages (TO‑247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions.
*For English specification, please contact us.
More Details
Applications:
- UPS
- PFC
- Motor Control
Features:
- Saturation Voltage Drop: Positive Temperature Coefficient
- Easy to Use in Parallel Circuits
- Low Switching Loss
- Built-in Fast Recovery Diode
- High Reliability and Thermal Stability
- Good Parameter Consistency
- Minimum Short Circuit Protection Time 5µs
Package Dimensions Diagram:
![[SYD3065SLB]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/426588_23113.png)