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WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM by Package
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
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    • Energy Vehicle
    • Home Appliance
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    • Industrial Equipment
    • Data Centers
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
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SYD40N120LN: 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters

SYD40N120LN: 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters

SYD40N120LN 1200V 40A trench field-stop IGBT, low VCE(sat), low switching loss, high short-circuit ruggedness, anti-parallel diode, 175°C, RoHS, for UPS.
Specification
Specification
More Details

Applications: 

  • Uninterruptible Power Supply 
  • Inverter 
  • Converter with High Switching Frequency
Features
  • High Breakdown Voltage up to 1200V for ImprovedReliability
  • Trench Field Stop Technology
  • High Ruggedness, Temperature Stable
  • Low switching losses
  • Easy Parallel Switching Capability due to Positive
  • Temperature Coefficient in VcEsat
  • Maximum junction temperature 175°C
 
 
SYD40N120LN: 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters

Package Dimensions Diagram:

[SYD40N120LN]

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