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![[SYD40N120LN] 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters](https://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_1000,w_500,f_auto,q_auto/23234143/589488_955853.png)
[SYD40N120LN] 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters
Package:TO-247-3
VCE(SAT)@typ.Tj=25°C: 1.9
VGEth@typ.Tj=25°C: 5
Details: SYD40N120LN 1200V 40A trench field-stop IGBT, low VCE(sat), low switching loss, high short-circuit ruggedness, anti-parallel diode, 175°C, RoHS, for UPS, general inverter, high-frequency converter semiconductor solutions.
VCE(SAT)@typ.Tj=25°C: 1.9
VGEth@typ.Tj=25°C: 5
Details: SYD40N120LN 1200V 40A trench field-stop IGBT, low VCE(sat), low switching loss, high short-circuit ruggedness, anti-parallel diode, 175°C, RoHS, for UPS, general inverter, high-frequency converter semiconductor solutions.
More Details
Applications:
- Uninterruptible Power Supply
- Inverter
- Converter with High Switching Frequency
Features
- High Breakdown Voltage up to 1200V for ImprovedReliability
- Trench Field Stop Technology
- High Ruggedness, Temperature Stable
- Low switching losses
- Easy Parallel Switching Capability due to Positive
- Temperature Coefficient in VcEsat
- Maximum junction temperature 175°C
Package Dimensions Diagram:
![[SYD40N120LN]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/155718_107225.png)


