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SYMT200FF120T6H-M: 1200V/200A IGBT module provides low switching loss and built-in NTC
Packaging Type: Econo3
VCE(SAT)@typ.Tj=25°C: 1.7
VGEth@typ.Tj=25°C: 5.6
Details: SYMT200FF120T6H-M 1200V 200A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low switching loss, low stray inductance, NTC thermistor, 2500V isolation, RoHS compliant, ideal for industrial inverters, servo drives and high-power semiconductor solutions.
VCE(SAT)@typ.Tj=25°C: 1.7
VGEth@typ.Tj=25°C: 5.6
Details: SYMT200FF120T6H-M 1200V 200A field stop trench gate IGBT module features >10μs short-circuit withstand, low VCE(sat), low switching loss, low stray inductance, NTC thermistor, 2500V isolation, RoHS compliant, ideal for industrial inverters, servo drives and high-power semiconductor solutions.
More Details
Applications:
- Industrial Inverters
- Servo Applications
Features:
- Short Circuit Rated >10μs
- Non Punch Through (NPT) Technology
- Low Saturation Voltage
- Low Switching Loss
- 100% RBSOA Tested (2×Ic)
- Low Stray Inductance
- Lead Free, Compliant with RoHS Requirement
Package Outline (Unit: mm):
![[SYMT200FF120T6H-M]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/427716_537181.png)