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Free Sample

Less Energy
More Efficiency

Home
Products
IPM Modules
IGBT Modules
IGBT Discretes
IGBT Chips
SiC
FRD(MUR)
Bridge Rectifier
Application
Energy Vehicle
Home Appliance
Renewable Energy
Industrial Equipment
Data Centers
Technology
Latest IPM Technology
High Voltage (HV) Die Technolog
Reliability & Qualification
About Us
Our Company
Technical Team
Custom Solutions
Contact Us
Blog
- Home
- Products
  IPM Modules
  IGBT Modules
  IGBT Discretes
  IGBT Chips
  SiC
  FRD(MUR)
  Bridge Rectifier
- Application
  Energy Vehicle
  Home Appliance
  Renewable Energy
  Industrial Equipment
  Data Centers
- Technology
  Latest IPM Technology
  High Voltage (HV) Die Technolog
  Reliability & Qualification
- About Us
  Our Company
  Technical Team
  Custom Solutions
- Contact Us
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Free Sample

SYF60P120A6K1: 1200V 60A FRD chip, 1.7V low VF, high frequency, for motor drives & solar inverters

SYF200P170CBK: 1700V 200A FRD chip, 2V low VF, soft switching, for wind power converters

SYD40N170TMA1: 700V/40A trench IGBT, low VCEsat, high ruggedness, 10μs SC withstand for EV charging

SYD75H120FNB: 1200V/75A trench IGBT, low loss, 10μs SC, fast recovery diode for solar/UPS/welding

SYD3065SLB: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

Package：TO-220F VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4.0 Details: SYD3065SLW/SLA/SLB/SLP 650V 30A high-speed IGBT transistor offers low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, easy parallel operation, multi-packages (TO‑247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions. *For English specification, please contact us.

[SYSM3F02R12HPD] 1200V 400A SiC MOS module, 2.55mΩ ultra‑low RDS(on), low inductance for motors EV

[SYC50P120H4WF] 1200V 50A Trench FS IGBT chip, low Eswitch, 10μs short‑circuit, for EV chargers, BMS

SYD2065SL: 650V/20A IGBT features low loss, fast switching, built-in FRD, easy parallel for UPS

SYD3065SLW: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

Package：TO-247 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 4 Details: SYD3065SLW 650V 30A high-speed IGBT transistor offers low VCE(sat), low conduction/switching loss, fast recovery diode, 5μs short-circuit withstand, easy parallel operation, multi-packages (TO‑247/220/220F/263), ideal for inverter, UPS, PFC and motor drive semiconductor solutions. *For English specification, please contact us.

All Categories - Design and manufacture semiconductor products - SHYSEMI

SYF60P120A6K1: 1200V 60A FRD chip, 1.7V low VF, high frequency, for motor drives & solar inverters

Size(Inch): 6 Type: Std VRRM: 1200 IFM: 60 Effective Die Quantity: 420 Details: The SYF60P120A6K1 is a 1200V 60A FRD bare die with 1.7V forward voltage. It features low loss and positive temperature coefficient, ideal for UPS and welding equipment.

SYF200P170CBK: 1700V 200A FRD chip, 2V low VF, soft switching, for wind power converters

Size(Inch): 12 Type: Std VRRM: 1700 IFM: 200 Effective Die Quantity: 550 Details: The SYF200P170CBK is a 1700V 200A FRD bare die with 2V forward voltage. It features low loss and high frequency, ideal for medium-voltage and wind power converters.

SYD40N170TMA1: 700V/40A trench IGBT, low VCEsat, high ruggedness, 10μs SC withstand for EV charging

Package：TO-247 VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.7 Details: SYD40N170TMA1 1700V 40A trench field‑stop IGBT, low saturation voltage, high short‑circuit ruggedness, 10μs SCSoa, positive temp coeff, 175°C, RoHS, for EV charger, UPS, industrial inverter semiconductor solutions.

SYD75H120FNB: 1200V/75A trench IGBT, low loss, 10μs SC, fast recovery diode for solar/UPS/welding

Package：TO-247 Plus VCE(SAT)@typ.Tj=25°C: 1.85 VGEth@typ.Tj=25°C: 5.7 Details: SYD75H120FHB 1200V 75A trench field‑stop IGBT, low VCE(sat), low switching loss, 10μs short‑circuit, fast recovery anti‑parallel diode, 150°C, RoHS, solar inverter, UPS, welding machine, PFC semiconductor.

SYD3065SLB: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

[SYSM3F02R12HPD] 1200V 400A SiC MOS module, 2.55mΩ ultra‑low RDS(on), low inductance for motors EV

Package：HPD Voltage(V): 1200 Current(A): 400/600/800 VGEth@typ.Tj=25°C: 3.0 Details: The SYSM3F02R12HPD is a high‑current 1200V SiC MOSFET module with 2.55mΩ on‑resistance. It features low switching losses and <10nH inductance, ideal for EV/HEV motor drives and high‑power converters.

[SYC50P120H4WF] 1200V 50A Trench FS IGBT chip, low Eswitch, 10μs short‑circuit, for EV chargers, BMS

Size(Inch): 8 Type: Std Voltage(V): 1200 Current(A): 50 Effective Die Quantity: 562 Details: The SYC50P120H4WF is a 1200V IGBT chip with Trench FS tech. It features low Eswitch, 10μs short‑circuit ruggedness and parallel capability, ideal for EV charger IGBT, motor drives and BMS applications.

SYD2065SL: 650V/20A IGBT features low loss, fast switching, built-in FRD, easy parallel for UPS

SYD3065SLW: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

SYD4065RH1: 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching

SYD050Q065AY1S3: 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature

SYD060Q065AY1S3: 650V/60A trench IGBT, ultra‑low VCE(sat), fast switching, high‑temp resistant

SYD075H065CX1S3: 650V/75A trench IGBT, low VCE(sat), fast switching, 175°C for solar/UPS/welding

SYD15H120ADB: 1200V/15A trench IGBT with low loss, positive temp coeff, high reliability for solar

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.85 VGEth@typ.Tj=25°C: 5.9 Details: SYD15H120ADB 1200V 15A field‑stop trench IGBT, low VCE(sat), low switching loss, positive temperature coefficient, 175°C, RoHS, for solar inverter, welder, UPS power semiconductor solutions.

SYD25H120ADB: 1200V/25A trench IGBT, low VCE(sat), low loss, positive temp coeff for welder/UPS

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 6 Details: SYD25H120ADB 1200V 25A field‑stop trench IGBT, 1.7V saturation voltage, low switching loss, positive temperature coefficient, 175°C, RoHS, solar inverter, welder, UPS power semiconductor.

SYD40H120ADB: 1200V/40A trench IGBT, low saturation voltage, low loss, high reliability for UPS

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.6 VGEth@typ.Tj=25°C: 5.5 Details: SYD40H120ADB 1200V 40A field‑stop trench IGBT, low VCE(sat), low switching loss, positive temperature coefficient, 175°C, RoHS, solar inverter, UPS, welding power semiconductor.

SYD3N020WRH: 1350V/20A RC IGBT with low loss, soft switching, for induction cooking, converter

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.66 VGEth@typ.Tj=25°C: 6.1 Details: SYD3N020WRH 1350V 20A RC trench IGBT, low VCEsat, low switching loss, halogen-free, RoHS, for induction cooking, microwave oven inverter, resonant converter semiconductor solutions.

SYD40N120LN: 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters

Package：TO-247-3 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5 Details: SYD40N120LN 1200V 40A trench field-stop IGBT, low VCE(sat), low switching loss, high short-circuit ruggedness, anti-parallel diode, 175°C, RoHS, for UPS, general inverter, high-frequency converter semiconductor solutions.

SYF100P65E2: 750V 200A FRD chip, 0.75V ultra‑low VF, soft recovery for industrial drives

Size(Inch): 6 Type: Std VRRM: 750 IFM: 100 Effective Die Quantity: 513 Details: The SYF200P75E2 is a 750V 200A FRD bare die with 0.75V forward voltage. It delivers low loss and high frequency, ideal for solar inverters and UPS.

SYF150P120A6S2: 1200V 150A FRD chip, 1.85V low VF, parallel-friendly for industrial drives

Size(Inch): 6 Type: Std VRRM: 1200 IFM: 150 Effective Die Quantity: 185 Details: The SYF150P120A6S2 is a 1200V 150A FRD bare die with 1.85V forward voltage. It features low loss and good current sharing, ideal for UPS and solar inverters.

Chip Designer and Manufacturer

SHYSEMI design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

SHYSEMI's Hot Products

Step into SHYSEMI

As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.

All Categories - Design and manufacture semiconductor products - SHYSEMI

SYF60P120A6K1: 1200V 60A FRD chip, 1.7V low VF, high frequency, for motor drives & solar inverters

Size(Inch): 6 Type: Std VRRM: 1200 IFM: 60 Effective Die Quantity: 420 Details: The SYF60P120A6K1 is a 1200V 60A FRD bare die with 1.7V forward voltage. It features low loss and positive temperature coefficient, ideal for UPS and welding equipment.

SYF200P170CBK: 1700V 200A FRD chip, 2V low VF, soft switching, for wind power converters

Size(Inch): 12 Type: Std VRRM: 1700 IFM: 200 Effective Die Quantity: 550 Details: The SYF200P170CBK is a 1700V 200A FRD bare die with 2V forward voltage. It features low loss and high frequency, ideal for medium-voltage and wind power converters.

SYD40N170TMA1: 700V/40A trench IGBT, low VCEsat, high ruggedness, 10μs SC withstand for EV charging

Package：TO-247 VCE(SAT)@typ.Tj=25°C: 1.7 VGEth@typ.Tj=25°C: 5.7 Details: SYD40N170TMA1 1700V 40A trench field‑stop IGBT, low saturation voltage, high short‑circuit ruggedness, 10μs SCSoa, positive temp coeff, 175°C, RoHS, for EV charger, UPS, industrial inverter semiconductor solutions.

SYD75H120FNB: 1200V/75A trench IGBT, low loss, 10μs SC, fast recovery diode for solar/UPS/welding

Package：TO-247 Plus VCE(SAT)@typ.Tj=25°C: 1.85 VGEth@typ.Tj=25°C: 5.7 Details: SYD75H120FHB 1200V 75A trench field‑stop IGBT, low VCE(sat), low switching loss, 10μs short‑circuit, fast recovery anti‑parallel diode, 150°C, RoHS, solar inverter, UPS, welding machine, PFC semiconductor.

SYD3065SLB: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

[SYSM3F02R12HPD] 1200V 400A SiC MOS module, 2.55mΩ ultra‑low RDS(on), low inductance for motors EV

Package：HPD Voltage(V): 1200 Current(A): 400/600/800 VGEth@typ.Tj=25°C: 3.0 Details: The SYSM3F02R12HPD is a high‑current 1200V SiC MOSFET module with 2.55mΩ on‑resistance. It features low switching losses and &lt;10nH inductance, ideal for EV/HEV motor drives and high‑power converters.

[SYC50P120H4WF] 1200V 50A Trench FS IGBT chip, low Eswitch, 10μs short‑circuit, for EV chargers, BMS

Size(Inch): 8 Type: Std Voltage(V): 1200 Current(A): 50 Effective Die Quantity: 562 Details: The SYC50P120H4WF is a 1200V IGBT chip with Trench FS tech. It features low Eswitch, 10μs short‑circuit ruggedness and parallel capability, ideal for EV charger IGBT, motor drives and BMS applications.

SYD2065SL: 650V/20A IGBT features low loss, fast switching, built-in FRD, easy parallel for UPS

SYD3065SLW: 650V/30A IGBT features low saturation voltage, high-speed switching and built-in FRD

SYD4065RH1: 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching

SYD050Q065AY1S3: 650V/50A trench IGBT with low saturation voltage, fast switching, high temperature

SYD060Q065AY1S3: 650V/60A trench IGBT, ultra‑low VCE(sat), fast switching, high‑temp resistant

SYD075H065CX1S3: 650V/75A trench IGBT, low VCE(sat), fast switching, 175°C for solar/UPS/welding

SYD15H120ADB: 1200V/15A trench IGBT with low loss, positive temp coeff, high reliability for solar

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.85 VGEth@typ.Tj=25°C: 5.9 Details: SYD15H120ADB 1200V 15A field‑stop trench IGBT, low VCE(sat), low switching loss, positive temperature coefficient, 175°C, RoHS, for solar inverter, welder, UPS power semiconductor solutions.

SYD25H120ADB: 1200V/25A trench IGBT, low VCE(sat), low loss, positive temp coeff for welder/UPS

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.8 VGEth@typ.Tj=25°C: 6 Details: SYD25H120ADB 1200V 25A field‑stop trench IGBT, 1.7V saturation voltage, low switching loss, positive temperature coefficient, 175°C, RoHS, solar inverter, welder, UPS power semiconductor.

SYD40H120ADB: 1200V/40A trench IGBT, low saturation voltage, low loss, high reliability for UPS

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.6 VGEth@typ.Tj=25°C: 5.5 Details: SYD40H120ADB 1200V 40A field‑stop trench IGBT, low VCE(sat), low switching loss, positive temperature coefficient, 175°C, RoHS, solar inverter, UPS, welding power semiconductor.

SYD3N020WRH: 1350V/20A RC IGBT with low loss, soft switching, for induction cooking, converter

Package：TO-247-3L VCE(SAT)@typ.Tj=25°C: 1.66 VGEth@typ.Tj=25°C: 6.1 Details: SYD3N020WRH 1350V 20A RC trench IGBT, low VCEsat, low switching loss, halogen-free, RoHS, for induction cooking, microwave oven inverter, resonant converter semiconductor solutions.

SYD40N120LN: 1200V/40A trench IGBT, low loss, high ruggedness, built-in diode for UPS/inverters

Package：TO-247-3 VCE(SAT)@typ.Tj=25°C: 1.9 VGEth@typ.Tj=25°C: 5 Details: SYD40N120LN 1200V 40A trench field-stop IGBT, low VCE(sat), low switching loss, high short-circuit ruggedness, anti-parallel diode, 175°C, RoHS, for UPS, general inverter, high-frequency converter semiconductor solutions.

SYF100P65E2: 750V 200A FRD chip, 0.75V ultra‑low VF, soft recovery for industrial drives

Size(Inch): 6 Type: Std VRRM: 750 IFM: 100 Effective Die Quantity: 513 Details: The SYF200P75E2 is a 750V 200A FRD bare die with 0.75V forward voltage. It delivers low loss and high frequency, ideal for solar inverters and UPS.

SYF150P120A6S2: 1200V 150A FRD chip, 1.85V low VF, parallel-friendly for industrial drives

Size(Inch): 6 Type: Std VRRM: 1200 IFM: 150 Effective Die Quantity: 185 Details: The SYF150P120A6S2 is a 1200V 150A FRD bare die with 1.85V forward voltage. It features low loss and good current sharing, ideal for UPS and solar inverters.

Chip Designer and Manufacturer

SHYSEMI design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

SHYSEMI's Hot Products

Step into SHYSEMI

As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.

Package：HPD Voltage(V): 1200 Current(A): 400/600/800 VGEth@typ.Tj=25°C: 3.0 Details: The SYSM3F02R12HPD is a high‑current 1200V SiC MOSFET module with 2.55mΩ on‑resistance. It features low switching losses and <10nH inductance, ideal for EV/HEV motor drives and high‑power converters.