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WhatsApp: +86 15361554542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.

Less Energy

More Efficiency

  • Home
  • Products 
    • IPM by Package
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
    • SiC
    • FRD(MUR)
    • Bridge Rectifier
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    • Energy Vehicle
    • Home Appliance
    • Renewable Energy
    • Industrial Equipment
    • Data Centers
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
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[MPRA1C65-S61] 650V 100A SiC rectifier module, negligible reverse recovery, high surge for welding

[MPRA1C65-S61] 650V 100A SiC rectifier module, negligible reverse recovery, high surge for welding

The MPRA1C65-S61 is a 650V 100A SiC rectifier module with negligible reverse recovery. Ideal for welding machines and DC charging systems.
Specification
Specification
More Details

Applications:

  • Welder CVT
  • UPS
  • DC Charging
  • High Frequency Output Rectifier

Features:

  • Almost no switching loss
  • Negligible reverse recovery
  • High surge current capabilit
  • Higher switching frequency
  • System efficiency improvement
  • Positive Temperature Coefficient
  • Temperature-Independent Switching
  • Low heat dissipation requirements
  • RoHS Halogen-free/Rohs compliant
 
[MPRA1C65-S61] 650V 100A SiC rectifier module, negligible reverse recovery, high surge for welding
Package Outline Information: 
[MPRA1C65-S61]
 

 

SHYSEMI's SOT-227 package features a military-grade rugged structure. Internally, it employs a Direct Bonded Copper (DBC) substrate and anti-fatigue soldering technology, endowing it with power cycling capabilities that far exceed those of conventional packages. Its typical lifespan can exceed 100,000 temperature cycles, ensuring long-term stable operation even in harsh industrial environments.

Furthermore, the package utilizes a "stacked busbar" design, with power terminals (DC+, DC-, AC output) arranged in parallel. This configuration enables loop inductance as low as 10nH, a critical feature for modern high-speed IGBTs and SiC MOSFETs as it effectively suppresses switching overvoltage and oscillations.

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    1. Holiday period: Oct 1 – Oct 7, 2026 (7 days in total). We will resume work on Oct 8.
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    We apologize for any inconvenience caused. Thank you so much for your trust and support. Wish you a wonderful holiday!

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    As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.

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