Go Back
![[MPRA1C65-S61] 650V 100A SiC rectifier module, negligible reverse recovery, high surge for welding](https://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_1000,w_500,f_auto,q_auto/23234143/256554_226967.png)
[MPRA1C65-S61] 650V 100A SiC rectifier module, negligible reverse recovery, high surge for welding
Package:SOT-227
Voltage(V): 650
Current(A): 100
Rthjc: 0.68
Details: The MPRA1C65-S61 is a 650V 100A SiC rectifier module with negligible reverse recovery. It features high surge capability and low loss, ideal for welding machines and DC charging systems (UPS).
Voltage(V): 650
Current(A): 100
Rthjc: 0.68
Details: The MPRA1C65-S61 is a 650V 100A SiC rectifier module with negligible reverse recovery. It features high surge capability and low loss, ideal for welding machines and DC charging systems (UPS).
More Details
Applications:
- Welder CVT
- UPS
- DC Charging
- High Frequency Output Rectifier
Features:
- Almost no switching loss
- Negligible reverse recovery
- High surge current capabilit
- Higher switching frequency
- System efficiency improvement
- Positive Temperature Coefficient
- Temperature-Independent Switching
- Low heat dissipation requirements
- RoHS Halogen-free/Rohs compliant
Package Outline Information:
![[MPRA1C65-S61]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/55324_944941.png)
SHYSEMI's SOT-227 package features a military-grade rugged structure. Internally, it employs a Direct Bonded Copper (DBC) substrate and anti-fatigue soldering technology, endowing it with power cycling capabilities that far exceed those of conventional packages. Its typical lifespan can exceed 100,000 temperature cycles, ensuring long-term stable operation even in harsh industrial environments.
Furthermore, the package utilizes a "stacked busbar" design, with power terminals (DC+, DC-, AC output) arranged in parallel. This configuration enables loop inductance as low as 10nH, a critical feature for modern high-speed IGBTs and SiC MOSFETs as it effectively suppresses switching overvoltage and oscillations.


