SYD4065RH1: 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching
SYD4065RH1 650V 40A trench IGBT with ultra-low VCE(sat), low switching loss, fast recovery, high thermal stability, RoHS compliant, ideal for PFC.
Specification
Specification
More Details
Applications:
PFC
Features:
Saturation Voltage Drop: Positive Temperature Coefficient
Easy to Use in Parallel Circuits
Low Switching Loss
Built-in Fast Recovery Diode
High Reliability and Thermal Stability
Good Parameter Consistency
Package Dimensions Diagram:
Power Semiconductor Solutions for A Sustainable Future
SHYSEMI manufactures IPM module, IGBT, SiC MOSFET & bridge rectifiers with in-house chips and 4 factories in China. 23+ years, AEC-Q101 certified. Request a quote!
As an innovative power semiconductor supplier, SHYSEMI specializes in the R&D, manufacturing, and sales of advanced power devices. offering high-performance IPMs, IGBTs, SiC solutions, MOSFETs, and related technologies for energy conversion, EVs, industrial automation, and renewable energy systems.
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