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[SYD4065RH1] 650V/40A IGBT transistor features ultra-low saturation voltage, fast switching
Package：TO-247
VCE(SAT)@typ.Tj=25°C: 1.55
VGEth@typ.Tj=25°C: 4.2
Details: SYD4065RH1 650V 40A trench IGBT with ultra-low VCE(sat), low switching loss, fast recovery, high thermal stability, RoHS compliant, ideal for PFC, power supply and industrial semiconductor solutions.
*For English specification, please contact us.
VCE(SAT)@typ.Tj=25°C: 1.55
VGEth@typ.Tj=25°C: 4.2
Details: SYD4065RH1 650V 40A trench IGBT with ultra-low VCE(sat), low switching loss, fast recovery, high thermal stability, RoHS compliant, ideal for PFC, power supply and industrial semiconductor solutions.
*For English specification, please contact us.
More Details
Applications:
- PFC
Features:
- Saturation Voltage Drop: Positive Temperature Coefficient
- Easy to Use in Parallel Circuits
- Low Switching Loss
- Built-in Fast Recovery Diode
- High Reliability and Thermal Stability
- Good Parameter Consistency
Package Dimensions Diagram:
![[SYD4065RH1]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/650285_471233.png)