Go Back
[SYD40N170TMA1] 700V/40A trench IGBT, low VCEsat, high ruggedness, 10μs SC withstand for EV charging
Package：TO-247
VCE(SAT)@typ.Tj=25°C: 1.7
VGEth@typ.Tj=25°C: 5.7
Details: SYD40N170TMA1 1700V 40A trench field‑stop IGBT, low saturation voltage, high short‑circuit ruggedness, 10μs SCSoa, positive temp coeff, 175°C, RoHS, for EV charger, UPS, industrial inverter semiconductor solutions.
VCE(SAT)@typ.Tj=25°C: 1.7
VGEth@typ.Tj=25°C: 5.7
Details: SYD40N170TMA1 1700V 40A trench field‑stop IGBT, low saturation voltage, high short‑circuit ruggedness, 10μs SCSoa, positive temp coeff, 175°C, RoHS, for EV charger, UPS, industrial inverter semiconductor solutions.
More Details
FEATURES:
1. High breakdown voltage to 1700V for improved reliability
2. Trench-Stop Technology offering :
- Very tight parameter distribution
- High ruggedness, temperature stable behavior
- Low VCEsat
- Short circuit withstand time - 10 s
- Easy parallel switching capability due to temperature coefficient in VCEsat
3.Enhanced avalanche capability
APPLICATION:
- Inverter
- Uninterrupted Power Supply
- EV-Charging
- PTC applications
Package Dimensions Diagram:
![[SYD40N170TMA1]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/155718_107225.png)