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[SYSM008S120TPKG1] 1200V 230A SiC MOSFET, 8.9mΩ ultra‑low RDS(on), high‑speed for EV inverters
Package: TPAK
Voltage(V): 1200
Current(A): 200
VGEth TJ =25°C.V: 2.7
Details: The SYSM008S120TPKG1 is a high‑current 1200V SiC MOSFET with 8.9mΩ on‑resistance. It delivers fast switching and robust diode performance, ideal for EV main drives and industrial converters.
Voltage(V): 1200
Current(A): 200
VGEth TJ =25°C.V: 2.7
Details: The SYSM008S120TPKG1 is a high‑current 1200V SiC MOSFET with 8.9mΩ on‑resistance. It delivers fast switching and robust diode performance, ideal for EV main drives and industrial converters.
More Details
Applications:
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Source sensing pin for increased efficiency
- Main inverter (electric traction)
Features:
- Low drain-source on-resistance: RDS(ON) = 8.9 mΩ (typ.)
- Easy to control Gate switching
- Enhancement mode: Vth = 1.8 to 4.0V
Package Outlines:
![[SYSM008S120TPKG1]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/229566_38046.png)