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[SYSM3F02R12HPD] 1200V 400A SiC MOS module, 2.55mΩ ultra‑low RDS(on), low inductance for motors EV
The SYSM3F02R12HPD is a high-current 1200V SiC MOSFET module with 2.55mΩ on-resistance. Ideal for EV/HEV motor drives and high-power converters.
More Details
Applications:
- Auto motive Applications
- HybridElectricalVehicles (HEV)
- Motor Drives
- Com mercial Agriculture Vehicles
Features:
- VDSS=1200V
- IDnom=400A
- New se miconductor material Silicon Carbide Low RDSon
- Low SwitchingLosses
- Low Qg andCrss
- Low Inductive Design<10nH
- Tvjop=150°C
![[SYSM3F02R12HPD] 1200V 400A SiC MOS module, 2.55mΩ ultra‑low RDS(on), low inductance for motors EV](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/421401_927291.png)
Package outlines:
![[SYSM3F02R12HPD]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/634368_800548.png)