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[SYSM3F02R12HPD] 1200V 400A SiC MOS module, 2.55mΩ ultra‑low RDS(on), low inductance for motors EV
Package：HPD
Voltage(V): 1200
Current(A): 400/600/800
VGEth@typ.Tj=25°C: 3.0
Details: The SYSM3F02R12HPD is a high‑current 1200V SiC MOSFET module with 2.55mΩ on‑resistance. It features low switching losses and <10nH inductance, ideal for EV/HEV motor drives and high‑power converters.
Voltage(V): 1200
Current(A): 400/600/800
VGEth@typ.Tj=25°C: 3.0
Details: The SYSM3F02R12HPD is a high‑current 1200V SiC MOSFET module with 2.55mΩ on‑resistance. It features low switching losses and <10nH inductance, ideal for EV/HEV motor drives and high‑power converters.
More Details
Applications:
- Auto motive Applications
- HybridElectricalVehicles (HEV)
- Motor Drives
- Com mercial Agriculture Vehicles
Features:
- VDSS=1200V
- IDnom=400A
- New se miconductor material Silicon Carbide Low RDSon
- Low SwitchingLosses
- Low Qg andCrss
- Low Inductive Design<10nH
- Tvjop=150°C
Package outlines:
![[SYSM3F02R12HPD]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/634368_800548.png)