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[SYSM480HF12DCM] 1200V 480A SiC MOSFET module, 2.2mΩ ultra‑low RDS(on), low inductance for EV drives
Package：DCM
Voltage(V): 1200
Current(A): 480
VGEth TJ =25°C.V: 2.6
Details: The SYSM480HF12DCM is a high‑power 1200V SiC module with 2.2mΩ on‑resistance. It features ≤6.6nH inductance, AQG324 qualification, ideal for EV/HEV main inverters.
Voltage(V): 1200
Current(A): 480
VGEth TJ =25°C.V: 2.6
Details: The SYSM480HF12DCM is a high‑power 1200V SiC module with 2.2mΩ on‑resistance. It features ≤6.6nH inductance, AQG324 qualification, ideal for EV/HEV main inverters.
More Details
Applications:
- Automotive Applications
- Hybrid Electrical Vehicles (H)EV
- Motor Drive
- Commercial Agriculture Vehicles
Electrical features:
- Vds=1200V
- Rdson≤2.2mohm
- New semiconductor material - Silicon Carbide
- Low Switching Losses
- Low Inductive Design≤6.6nH
- Low Qg and Crss
- Tvj op = 175°C
Mechanical Features:
- High Performance Si3N4 Ceramic
- Direct Cooled PinFin Base Plate
- Hight Tg EMC Transfer Molding
- Copper wire bonding
- Ag sintering
- RoHS compliant
- UL 94 V0 module frame
- AQG324 qualified
Package Outlines:
![[SYSM480HF12DCM]](http://custom-images.strikinglycdn.com/res/hrscywv4p/image/upload/c_limit,fl_lossy,h_9000,w_1200,f_auto,q_auto/23234143/895562_360852.png)