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WhatsApp: +86 153 6155 4542
info@shysemi.com
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
Less Energy
More Efficiency
  • Home
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    • IPM
    • IGBT Modules
    • IGBT Discretes
    • IGBT Chips
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We design and manufacture semiconductor chips, discrete power devices, and power modules for your products.
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[DIP-26] UVLO on all channels,  Cross-conduction protection

[DIP-26] UVLO on all channels, Cross-conduction protection

* Prices fluctuate slightly with the market.

Chips: IGBT
Topological Function: Three-phase full-bridge
Frequency: 20 kHz and below, with temperature detection
Typical Application: Frequency converters and inverters
More Details

Product Details: SYIM656-DG, SYIM656-DGT, SYIM676-DG, SYIM676-DGT

Its key advantage lies in its wider pin pitch compared with standard DIP or SOP packages. The increased pin spacing directly provides greater creepage and clearance distances, which effectively prevent arcing or short-circuiting between adjacent pins under high-humidity or contaminated conditions.
This design feature greatly improves system reliability and safety in high-voltage environments, making it ideal for applications that must withstand hundreds or even thousands of volts over extended operation periods.

Features:

  • Fully insulated Double in line power module,integrated with 3Φ full bridge
  • Using lMS insulated and heat-dissipating substrate
  • DlP(Double in line)fully insulated packagestructure is adopted
  • Active high, compatible with TTL / CMOS level
  • Integrated bootstrap functionality
  • Independent inverter over-current shutdown
  • Under-voltage lockout at all channels
  • Cross-conduction prevention
  • Fault signal output
  • Independent low side lGBT emitter
Internal Electrical Schematic:  
DIP-26: Strong drive capability perfectly
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