
Less Energy
More Efficiency
- Products
- IPM
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- New Energy Vehicle
- Home Appliance
- Energy Storage
- Industrial Equipment
- Data Centers
- …
- Products
- IPM
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- New Energy Vehicle
- Home Appliance
- Energy Storage
- Industrial Equipment
- Data Centers
Less Energy
More Efficiency
- Products
- IPM
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- New Energy Vehicle
- Home Appliance
- Energy Storage
- Industrial Equipment
- Data Centers
- …
- Products
- IPM
- IGBT Modules
- IGBT Discretes
- IGBT Chips
- SiC
- FRD(MUR)
- Bridge Rectifier
- Application
- New Energy Vehicle
- Home Appliance
- Energy Storage
- Industrial Equipment
- Data Centers
IGBT Modules
Mid/High Power F Series
Why Choose SHYSEMI’s Mid/High Power F Series IGBT Modules?
The medium and high-power F series modules of SHYSEMI are available in two sizes: 34mm and 62mm packages, it not only demonstrate the manufacturer's design capabilities but also require high-quality raw materials. The IGBT modules' low conduction losses, high switching frequencies, and excellent heat dissipation ensure stable operation even in harsh environments.
As SHYSEMI's flagship product line, the 62 mm series represents leading quality in China, with test data comparable to that of top German and Japanese products.
34mm Applications:
The 34mm IGBT module standard was primarily established by industry leaders such as Infineon, Fuji Electric, and Mitsubishi. SHYSEMI has now made significant breakthroughs in this technology. By employing the latest micro-pattern trench field-stop chip technology, the company produces thinner chips that substantially reduce both turn-on and turn-off losses (Eon/Eoff). Furthermore, through the use of high-performance thermal grease or even sintered connections to attach the chip directly to the substrate, thermal resistance is greatly minimized.
- Welding Machine、Cutting Machine
- Plating Power Supply、Induction Heating
- SMPS、UPS
SYIM15S60
- Package:34mm
- Voltage(V): 650
- Current(A): 75
- VCE(SAT)@typ.Tj=25°C: 5
- VGEth@typ.Tj=25°C: 1.9
SYMF75HF120T1VH
- Package:34mm
- Voltage(V): 1200
- Current(A): 75
- VCE(SAT)@typ.Tj=25°C: 5
- VGEth@typ.Tj=25°C: 3.3
SYMF100HF120T1VH
- Package:34mm
- Voltage(V): 1200
- Current(A): 100
- VCE(SAT)@typ.Tj=25°C: 5
- VGEth@typ.Tj=25°C: 3.3
SYMT150HF120T1VH-SF
- Package:34mm
- Voltage(V): 1200
- Current(A): 150
- VCE(SAT)@typ.Tj=25°C: 5.7
- VGEth@typ.Tj=25°C: 1.7
34mm Features:
- Short Circuit Rated >10μs
- Non Punch Through (NPT) Technology
- Low Saturation Voltage
- Low Switching Loss
- 100% RBSOA Tested (2×Ic)
- Low Stray Inductance
- Lead Free, Compliant with RoHS Requirement

62mm Applications:
The 62mm IGBT module represents a highly mature and widely adopted standard for high-power applications. Its design integrates numerous advanced IGBT and diode chips to achieve exceptionally high current ratings. The high heat generated by these multiple chips is effectively dissipated through high-performance thermal interface materials and sintering technology. Engineered for demanding 24/7 industrial operation in harsh environments—such as mines, steel mills, and offshore wind farms—this module offers significant system-level advantages. Specifically, compared to using several smaller modules in parallel, a single 62mm module simplifies the design of the gate drive circuit, cooling system, busbar connections, and protection circuitry, thereby lowering overall system integration costs.
- Welding
- HEV Inverter
- Industrial Motor Drives
- UPS
SYMT100HF170T1VH
- Package:62mm
- Voltage(V): 1700
- Current(A): 100
- VCE(SAT)@typ.Tj=25°C: 6
- VGEth@typ.Tj=25°C: 2.4
SYMT200HF120T2VH-M
- Package:62mm
- Voltage(V): 1200
- Current(A): 200
- VCE(SAT)@typ.Tj=25°C: 5.7
- VGEth@typ.Tj=25°C: 1.8
SYMT300HF120T2VH-M
- Package:62mm
- Voltage(V): 1200
- Current(A): 300
- VCE(SAT)@typ.Tj=25°C: 5.9
- VGEth@typ.Tj=25°C: 1.9
SYMT150HF170T2VH
- Package:62mm
- Voltage(V): 1700
- Current(A): 150
- VCE(SAT)@typ.Tj=25°C: 6.0
- VGEth@typ.Tj=25°C: 2.3
SYMT200HF170T2VH
- Package:62mm
- Voltage(V): 1700
- Current(A): 200
- VCE(SAT)@typ.Tj=25°C: 6.0
- VGEth@typ.Tj=25°C: 2.3
SYMT150CU120T2VH
- Package:62mm
- Voltage(V): 1200
- Current(A): 150
- VCE(SAT)@typ.Tj=25°C: 5.9
- VGEth@typ.Tj=25°C: 1.7
SYMT200CU120T2VH
- Package:62mm
- Voltage(V): 1200
- Current(A): 300
- VCE(SAT)@typ.Tj=25°C: 6
- VGEth@typ.Tj=25°C: 3.15
62mm Features:
- Short Circuit Rated >10μs
- Non Punch Through (NPT) Technology
- Low Saturation Voltage
- Low Switching Loss
- 100% RBSOA Tested (2×Ic)
- Low Stray Inductance
- Lead Free, Compliant with RoHS Requirement

SHYSEMI is striving to become a world-leading semiconductor supplier.



